The Tyndall National Institute is one of Europe's leading research centres, specialising in Information and Communications Technology (ICT) hardware. http://hdl.handle.net/10468/41 2013-06-19T13:59:35Z 2013-06-19T13:59:35Z Coyle, Jason P. Dey, Gangotri Sirianni, Eric R. Kemmell, Marianna L. Yap, Glenn P. A. Ritala, Mikko Leskela, Markku Elliott, Simon D. Barry, Sean T. http://hdl.handle.net/10468/1056 2013-04-11T02:00:12Z 2013-03-01T00:00:00Z

Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor Coyle, Jason P.; Dey, Gangotri; Sirianni, Eric R.; Kemmell, Marianna L.; Yap, Glenn P. A.; Ritala, Mikko; Leskela, Markku; Elliott, Simon D.; Barry, Sean T. Two novel N-heterocyclic carbene (NHC)-containing copper(I) amides are reported as atomic layer deposition (ALD) precursors. 1,3-Diisopropyl-imidazolin-2-ylidene copper hexamethyldisilazide (1) and 4,5-dimethyl-1,3-diisopropyl-imidazol-2-ylidene copper hexamethyldisilazide (2) were synthesized and structurally characterized. The thermal behavior of both compounds was studied by thermogravimetric analysis (TGA), and they were both found to be reasonably volatile compounds. Compound 1 had no residual mass in the TGA and showed long-term stability at temperatures as high as 130 °C, while 2 had a residual mass of 7.4%. Copper metal with good resistivity was deposited using 1 by plasma-enhanced atomic layer deposition. The precursor demonstrated self-limiting behavior indicative of ALD, and gave a growth rate of 0.2 Å/cycle. Compound 2 was unsuccessful as an ALD precursor under similar conditions. Density functional theory calculations showed that both compounds adsorb dissociatively onto a growing copper film as long as there is some atomic roughness, via cleavage of the Cu-carbene bond.

2013-03-01T00:00:00Z Sharma, Dimpy http://hdl.handle.net/10468/1136 2013-05-24T02:00:16Z 2013-01-01T00:00:00Z

Investigation of numerical atomic orbitals for first-principles calculations of the electronic and transport properties of silicon nanowire structures Sharma, Dimpy This thesis is focused on the application of numerical atomic basis sets in studies of the structural, electronic and transport properties of silicon nanowire structures from first-principles within the framework of Density Functional Theory. First we critically examine the applied methodology and then offer predictions regarding the transport properties and realisation of silicon nanowire devices. The performance of numerical atomic orbitals is benchmarked against calculations performed with plane waves basis sets. After establishing the convergence of total energy and electronic structure calculations with increasing basis size we have shown that their quality greatly improves with the optimisation of the contraction for a fixed basis size. The double zeta polarised basis offers a reasonable approximation to study structural and electronic properties and transferability exists between various nanowire structures. This is most important to reduce the computational cost. The impact of basis sets on transport properties in silicon nanowires with oxygen and dopant impurities have also been studied. It is found that whilst transmission features quantitatively converge with increasing contraction there is a weaker dependence on basis set for the mean free path; the double zeta polarised basis offers a good compromise whereas the single zeta basis set yields qualitatively reasonable results. Studying the transport properties of nanowire-based transistor setups with p+-n-p+ and p+-i-p+ doping profiles it is shown that charge self-consistency affects the I-V characteristics more significantly than the basis set choice. It is predicted that such ultrascaled (3 nm length) transistors would show degraded performance due to relatively high source-drain tunnelling currents. Finally, it is shown the hole mobility of Si nanowires nominally doped with boron decreases monotonically with decreasing width at fixed doping density and increasing dopant concentration. Significant mobility variations are identified which can explain experimental observations.

2013-01-01T00:00:00Z Horan, Laura E. Ruth, Albert A. Garcia-Gunning, Fatima C. http://hdl.handle.net/10468/894 2013-04-25T02:00:12Z 2012-12-01T00:00:00Z

Hollow core photonic crystal fiber based viscometer with Raman spectroscopy Horan, Laura E.; Ruth, Albert A.; Garcia-Gunning, Fatima C. The velocity of a liquid flowing through the core of a hollow core photonic crystal fiber (driven by capillary forces) is used for the determination of a liquid's viscosity, using volumes of less than 10 nl. The simple optical technique used is based on the change in propagation characteristics of the fiber as it fills with the liquid of interest via capillary action, monitored by a laser source. Furthermore, the liquid filled hollow core photonic crystal fiber is then used as a vessel to collect Raman scattering from the sample to determine the molecular fingerprint of the liquid under study. This approach has a wide variety of indicative uses in cases where nano-liter samples are necessary. We use 10–12 cm lengths of hollow core photonic crystal fibers to determine the viscosity and Raman spectra of small volumes of two types of monosaccharides diluted in a phosphate buffer solution to demonstrate the principle. The observed Raman signal is strongest when only the core of the hollow core photonic crystal fiber is filled, and gradually decays as the rest of the fiber fills with the sample.

2012-12-01T00:00:00Z Varghese, Justin Manjaly http://hdl.handle.net/10468/992 2013-02-27T03:00:14Z 2012-12-01T00:00:00Z

Nanostructured ferroelectric materials Varghese, Justin Manjaly Nanostructured materials are central to the evolution of future electronics and information technologies. Ferroelectrics have already been established as a dominant branch in the electronics sector because of their diverse application range such as ferroelectric memories, ferroelectric tunnel junctions, etc. The on-going dimensional downscaling of materials to allow packing of increased numbers of components onto integrated circuits provides the momentum for the evolution of nanostructured ferroelectric materials and devices. Nanoscaling of ferroelectric materials can result in a modification of their functionality, such as phase transition temperature or Curie temperature (TC), domain dynamics, dielectric constant, coercive field, spontaneous polarisation and piezoelectric response. Furthermore, nanoscaling can be used to form high density arrays of monodomain ferroelectric nanostructures, which is desirable for the miniaturisation of memory devices. This thesis details the use of various types of nanostructuring approaches to fabricate arrays of ferroelectric nanostructures, particularly non-oxide based systems. The introductory chapter reviews some exemplary research breakthroughs in the synthesis, characterisation and applications of nanoscale ferroelectric materials over the last decade, with priority given to novel synthetic strategies. Chapter 2 provides an overview of the experimental methods and characterisation tools used to produce and probe the properties of nanostructured antimony sulphide (Sb2S3), antimony sulpho iodide (SbSI) and lead titanate zirconate (PZT). In particular, Chapter 2 details the general principles of piezoresponse microscopy (PFM). Chapter 3 highlights the fabrication of arrays of Sb2S3 nanowires with variable diameters using newly developed solventless template-based approach. A detailed account of domain imaging and polarisation switching of these nanowire arrays is also provided. Chapter 4 details the preparation of vertically aligned arrays of SbSI nanorods and nanowires using a surface-roughness assisted vapour-phase deposition method. The qualitative and quantitative nanoscale ferroelectric properties of these nanostructures are also discussed. Chapter 5 highlights the fabrication of highly ordered arrays of PZT nanodots using block copolymer self-assembled templates and their ferroelectric characterisation using PFM. Chapter 6 summarises the conclusions drawn from the results reported in chapters 3, 4 and 5 and the future work.

2012-12-01T00:00:00Z