Improved high permeability CoZrTaB laminated thin films with novel CMOS compatible dielectric material
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Accepted Version
Date
2023-09-04
Authors
Wei, Guannan
Das, Rajasree
Lordan, Daniel
Sai, Ranajit
Hayes, Mike
Lorenc, Marek
Clarke, Barry
Hurley, David
McCloskey, Paul
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
This paper present an optimized CoZrTaB-based laminated thin films with a novel wet etch-able oxide dielectric material. Wet etching capability was studied on the stack material exhibiting a narrow and clean undercut. Good uniaxial anisotropy with low coercivity was achieved via in-situ magnetic alignment during magnetron sputtering. Permeability of 432 and Q-factor of 23.4 at 100 MHz were observed in high frequency permeameter measurement. Finally thermal annealing was carried out at various temperatures. Uniaxial anisotropy was maintained up to 300 °C, while an enhancement of permeability (by 25%) was observed.
Description
Keywords
CMOS compatible , High permeability , High frequency soft magnetic material , Inductor
Citation
Wei, G., Das, R., Lordan, D., Sai, R., Hayes, M., Lorenc, M., Clarke, B., Hurley, D. and McCloskey, P. (2023) 'Improved high permeability CoZrTaB laminated thin films with novel CMOS compatible dielectric material', 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers), Sendai, Japan, 15-19 May, pp. 1-2. https://doi.org/10.1109/INTERMAGShortPapers58606.2023.10228354
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