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Improved room-temperature luminescence of core-shell InGaAs/GaAs nanopillars via lattice-matched passivation

Komolibus, Katarzyna; Scofield, Adam C.; Gradkowski, Kamil; Ochalski, Tomasz J.; Kim, Hyunseok; Huffaker, Diana L.; Huyet, Guillaume (AIP Publishing, 2016-02-09)
Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices

Thoma, Jiri; Liang, Baolai; Lewis, Liam; Hegarty, Stephen P.; Huyet, Guillaume; Huffaker, Diana L. (AIP Publishing, 2013)
Carrier localization and in-situ annealing effect on quaternary Ga1-xInxAsySb1-y/GaAs quantum wells grown by Sb pre-deposition

Thoma, Jiri; Liang, Baolai; Lewis, Liam; Hegarty, Stephen P.; Huyet, Guillaume; Huffaker, Diana L. (AIP Publishing, 2013)
Ultrafast dynamics of type-II GaSb/GaAs quantum dots

Komolibus, Katarzyna; Piwonski, Tomasz; Gradkowski, Kamil; Reyner, C. J.; Liang, Baolai; Huyet, Guillaume; Huffaker, Diana L.; Houlihan, John (AIP Publishing, 2015)
Electro-optic properties of GaInAsSb/GaAs quantum well for high-speed integrated optoelectronic devices

Thoma, Jiri; Liang, Baolai; Reyner, Charles; Ochalski, Tomasz J.; Williams, David P.; Hegarty, Stephen P.; Huffaker, Diana L.; Huyet, Guillaume (AIP Publishing, 2013)
Coulomb effect inhibiting spontaneous emission in charged quantum dot

Gradkowski, Kamil; Ochalski, Tomasz J.; Pavarelli, Nicola; Williams, David P.; Huyet, Guillaume; Liang, Baolai; Huffaker, Diana L. (AIP Publishing, 2010)
Complex emission dynamics of type-II GaSb/GaAs quantum dots

Gradkowski, Kamil; Pavarelli, Nicola; Ochalski, Tomasz J.; Williams, David P.; Tatebayashi, Jun; Huyet, Guillaume; O'Reilly, Eoin P.; Huffaker, Diana L. (AIP Publishing, 2009)