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Now showing items 1-4 of 4

The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

Fu, Yen-Chun; Peralagu, Uthayasankaran; Millar, David A. J.; Lin, Jun; Povey, Ian M.; Li, Xu; Monaghan, Scott; Droopad, Ravi; Hurley, Paul K.; Thayne, Iain G. (AIP Publishing, 2017-04-06)
Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

O'Connor, Éamon; Cherkaoui, Karim; Monaghan, Scott; Sheehan, Brendan; Povey, Ian M.; Hurley, Paul K. (AIP Publishing, 2017-01-19)
Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

Nazarov, Alexei N.; Ferain, Isabelle; Akhavan, Nima Dehdashti; Razavi, Pedram; Yu, Ran; Colinge, Jean-Pierre (AIP Publishing, 2011)
A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

O'Connor, Éamon; Brennan, B.; Djara, Vladimir; Cherkaoui, Karim; Monaghan, Scott; Newcomb, Simon B.; Contreras, R.; Milojevic, M.; Hughes, Gregory; Pemble, Martyn E.; Wallace, R. M.; Hurley, Paul K. (AIP Publishing, 2011)

Now showing items 1-4 of 4