Numerical simulation of the anodic formation of nanoporous InP

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dc.contributor.author Lynch, Robert P.
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Clancy, Ian
dc.contributor.author Corcoran, David
dc.contributor.author Buckley, D. Noel
dc.date.accessioned 2013-03-04T14:10:13Z
dc.date.available 2013-03-04T14:10:13Z
dc.date.copyright 2004
dc.date.issued 2004-01
dc.identifier.citation Lynch, R., O’Dwyer, C., Clancy, I., Corcoran, D., Buckley, D. N. (2004) 'Numerical Simulation of the Anodic Formation of Nanoporous InP', 206th Meeting of the Electrochemical Society: State-of-the-Art Program on Compound Semiconductors XLI. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. Pennington, NJ: The Electrochemical Society, 6, pp. 85-95. en
dc.identifier.volume 6 en
dc.identifier.startpage 85 en
dc.identifier.endpage 95 en
dc.identifier.isbn 1-56677-419-5
dc.identifier.uri http://hdl.handle.net/10468/1008
dc.description.abstract Anodic etching of n-type InP in KOH electrolytes under suitable conditions leads to the formation of a nanoporous region beneath a ~40 nm dense near-surface layer [1]. The early stages of the process involve the formation of square-based pyramidal porous domains [2] and a mechanism is proposed based on directional selectivity of pore growth along the <100> directions. A numerical model of this mechanism is described in this paper. In the algorithm used the growth is limited to the <100> directions and the probability of growth at any pore tip is controlled by the potential and the concentration of electrolyte at the pore tip as well as the suitability of the pore tip to support further growth. The simulated porous structures and their corresponding current versus time curves are in good agreement with experimental data. The results of the simulation also suggest that, after an initial increase in current caused by the spreading out of the porous domains from their origins, growth is limited by the diffusion rate of electrolyte along the pores with the final fall-off in current being caused by irreversible processes such as the formation of a passivating film at the tips or some other modification of the state of the pore tip. en
dc.description.uri http://www.electrochem.org/dl/pv/published/2004/2004.htm#206pub en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher The Electrochemical Society en
dc.relation.ispartof 206th Meeting of the Electrochemical Society Conference, Honolulu, Hawaii, 3-8 Oct, 2004
dc.rights © The Electrochemical Society, Inc. 2004. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Lynch, R., O’ Dwyer, C., Clancy, I., Corcoran, D., Buckley, D. N. (2004) 'Numerical Simulation of the Anodic Formation of Nanoporous InP', 206th Meeting of the Electrochemical Society: State -of-the-Art Program on Compound Semiconductors XLI. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. Pennington, NJ: The Electrochemical Society, 6, pp. 85-95. en
dc.subject Anodic etching en
dc.subject n-type InP en
dc.subject KOH electrolytes en
dc.subject Nanoporous InP en
dc.subject.lcsh Electrochemistry en
dc.subject.lcsh Materials science en
dc.title Numerical simulation of the anodic formation of nanoporous InP en
dc.type Conference item en
dc.internal.authorurl http://research.ucc.ie/profiles/D004/codwyer en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2012-11-30T12:09:02Z
dc.description.version Submitted Version en
dc.internal.rssid 162343201
dc.description.status Peer reviewed en
dc.identifier.journaltitle Proc. Electrochem. Soc. en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Honolulu, Hawaii, USA. en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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