Deconvolution of the potential and time dependence of electrochemical porous semiconductor formation
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Date
2009-01
Authors
Quill, Nathan
O'Dwyer, Colm
Lynch, Robert P.
Buckley, D. Noel
Journal Title
Journal ISSN
Volume Title
Publisher
The Electrochemical Society
Published Version
Abstract
A layer of porous InP is grown beneath a thin dense surface layer when n-InP electrodes are anodized to sufficiently high potentials in aqueous KOH solutions. The shape of the linear sweep (LSV) or the cyclic voltammogram (CV) is dependent on carrier concentration. A technique is presented to deconvolute the effects of potential and time on a CV. The results obtained from this technique are used to explain the shape of the anodic current response and its relation to porous layer formation. The accuracy of the deconvolution technique is then tested by comparison to experimental results.
Description
Keywords
Porous InP , n-InP electrodes , Aqueous KOH , Linear sweep (LSV) , Cyclic voltammogram (CV) , Anodic current response , Porous layer formation
Citation
Quill, N.,O'Dwyer, C.,Lynch, R.,Buckley, D. N. (2009) 'Deconvolution of the Potential and Time Dependence of Electrochemical Porous Semiconductor Formation'. ECS Trans, 19(3), pp. 295-304.doi: 10.1149/1.3120709
Link to publisher’s version
Copyright
© The Electrochemical Society, Inc. 2009. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Quill, N., O'Dwyer, C., Lynch, R., Buckley, D. N. (2009) 'Deconvolution of the Potential and Time Dependence of Electrochemical Porous Semiconductor Formation'. ECS Trans, 19(3), pp. 295-304.doi: 10.1149/1.3120709