Formation of nanoporous InP by electrochemical anodization

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dc.contributor.author Buckley, D. Noel
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Lynch, Robert P.
dc.contributor.author Newcomb, Simon B.
dc.date.accessioned 2013-03-04T16:52:36Z
dc.date.available 2013-03-04T16:52:36Z
dc.date.copyright 2004
dc.date.issued 2004-01
dc.identifier.citation Buckley, D. N., O’Dwyer, C., Lynch, R., Sutton, D., Newcomb, S. B. (2004) 'Formation of Nanoporous InP by Electrochemical Anodization', 206th Meeting of the Electrochemical Society: State -of-the-Art Program on Compound Semiconductors XLI. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. Pennington, NJ: The Electrochemical Society, 6, pp. 103-117. en
dc.identifier.volume 6 en
dc.identifier.startpage 103 en
dc.identifier.endpage 117 en
dc.identifier.isbn 1-56677-419-5
dc.identifier.uri http://hdl.handle.net/10468/1011
dc.description.abstract Porous InP layers can be formed electrochemically on (100) oriented n- InP substrates in aqueous KOH. A nanoporous layer is obtained underneath a dense near-surface layer and the pores appear to propagate from holes through the near-surface layer. In the early stages of the anodization transmission electron microscopy (TEM) clearly shows individual porous domains which appear to have a square-based pyramidal shape. Each domain appears to develop from an individual surface pit which forms a channel through this near-surface layer. We suggest that the pyramidal structure arises as a result of preferential pore propagation along the <100> directions. AFM measurements show that the density of surface pits increases with time. Each of these pits acts as a source for a pyramidal porous domain. When the domains grow, the current density increases correspondingly. Eventually, the domains meet forming a continuous porous layer, the interface between the porous and bulk InP becomes relatively flat and its total effective surface area decreases resulting in a decrease in the current density. Numerical models of this process have been developed. Current-time curves at constant potential exhibit a peak and porous layers are observed to form beneath the electrode surface. The density of pits formed on the surface increases with time and approaches a plateau value. en
dc.description.uri http://www.electrochem.org/dl/pv/published/2004/2004.htm#206pub en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher The Electrochemical Society en
dc.relation.ispartof 206th Meeting of the Electrochemical Society Conference, Honolulu, Hawaii, 3-8 Oct, 2004
dc.rights © The Electrochemical Society, Inc. 2004. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Buckley, D. N., O’Dwyer, C., Lynch, R., Sutton, D., Newcomb, S. B. (2004) 'Formation of Nanoporous InP by Electrochemical Anodization', 206th Meeting of the Electrochemical Society: State -of-the-Art Program on Compound Semiconductors XLI. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. Pennington, NJ: The Electrochemical Society, 6, pp. 103-117. en
dc.subject Porous InP layers en
dc.subject InP substrates en
dc.subject Aqueous KOH en
dc.subject Transmission electron microscopy (TEM) en
dc.subject AFM measurement en
dc.subject.lcsh Electrochemistry en
dc.subject.lcsh Materials science en
dc.title Formation of nanoporous InP by electrochemical anodization en
dc.type Conference item en
dc.internal.authorurl http://research.ucc.ie/profiles/D004/codwyer en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2012-11-30T12:09:29Z
dc.description.version Submitted Version en
dc.internal.rssid 162343099
dc.description.status Peer reviewed en
dc.identifier.journaltitle Proc. Electrochem. Soc. en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Honolulu, Hawaii, USA en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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