Field-effect transistor figures of merit for vapor–liquid–solid-grown Ge1-xSnx (x = 0.03–0.09) nanowire devices

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Show simple item record Galluccio, Emmanuele Doherty, Jessica Biswas, Subhajit Holmes, Justin D. Duffy, Ray 2020-06-18T16:32:44Z 2020-06-18T16:32:44Z 2020-04-08
dc.identifier.citation Galluccio, E., Dohert, J., Biswas, S., Holmes, J. D. and Duffy, R. (2020) 'Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices', ACS Applied Electronic Materials, 2(5), pp.1226-1234. doi: 10.1021/acsaelm.0c00036 en
dc.identifier.volume 2 en
dc.identifier.issued 5 en
dc.identifier.startpage 1226 en
dc.identifier.endpage 1234 en
dc.identifier.issn 2637-6113
dc.identifier.doi 10.1021/acsaelm.0c00036 en
dc.description.abstract Ge1-xSnx alloys form a heterogeneous material system with high potential for applications in both optoelectronic and high-speed electronics devices. The attractiveness of Ge1-xSnx lies in the ability to tune the semiconductor band gap and electronic properties as a function of Sn concentration. Advances in Ge1-xSnx material synthesis have raised expectations recently, but there are considerable problems in terms of device demonstration. Although Ge1-xSnx thin films have been previously explored experimentally, in-depth studies of the electrical properties of Ge1-xSnx nanostructures are very limited, specifically those on nanowires grown via a bottom-up vapor–liquid–solid (VLS) process using metal catalysts. In this study, a detailed electrical investigation is presented of nominally undoped Ge1-xSnx bottom-up-grown nanowire devices with different Sn percentages (3–9 at. %). The entire device fabrication process is performed at relatively low temperatures, the maximum temperature being 440 °C. Device current modulation is performed through backgating from a substrate electrode, achieving impressive on–off current (ION/IOFF) ratios of up to 104, showing their potential for electronic and sensor-based applications. Contact resistance (RC) extraction is essential for proper VLS-grown nanowire device electrical evaluation. Once the RC contribution is extracted and removed, parameter values such as mobility can change significantly, by up to 70% in this work. When benchmarked against other Ge1-xSnx electronic devices, the VLS-grown nanowire devices have potential in applications where a high ION/IOFF ratio is important and where thermal budget and processing temperatures are required to be kept to minimum. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.rights © 2020 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see en
dc.subject Ge1-xSnx en
dc.subject Nanowires en
dc.subject Low-temperature processing en
dc.subject Contact resistance en
dc.subject Carrier mobility en
dc.subject Sub-threshold slope en
dc.subject MOSFETs en
dc.title Field-effect transistor figures of merit for vapor–liquid–solid-grown Ge1-xSnx (x = 0.03–0.09) nanowire devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en Access to this article is restricted until 12 months after publication by request of the publisher. en 2021-04-08
dc.description.version Accepted Version en
dc.internal.rssid 519536013
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Applied Electronic Materials en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ en

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