6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band

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dc.contributor.author Riza, Nabeel A.
dc.contributor.author Arain, Muzzamil
dc.contributor.author Perez, Frank
dc.date.accessioned 2020-07-14T08:52:19Z
dc.date.available 2020-07-14T08:52:19Z
dc.date.issued 2005-11-21
dc.identifier.citation Riza, N. A., Arain, M., and Perez, F. (2005) '6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band', Journal of Applied Physics, 98, 103512, (5 pp). doi: 10.1063/1.2133897 en
dc.identifier.volume 98 en
dc.identifier.issued 1010 en
dc.identifier.startpage 1 en
dc.identifier.endpage 5 en
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/10244
dc.identifier.doi 10.1063/1.2133897 en
dc.description.abstract 6H single-crystal silicon carbide (SiC) is an excellent optical material for extremely high temperature applications. Furthermore, the telecommunication infrared band (e.g., 1500-1600 nm) is an eye safe and high commercial maturity optical technology. With this motivation, the thermo-optic coefficient partial derivative n/partial derivative T for 6H single-crystal SiC is experimentally measured and analyzed from near room temperature to a high temperature of 1273 K with data taken at the 1550 nm wavelength. Specifically, the natural etalon behavior of 6-H single-crystal SiC is exploited within a simple polarization-insensitive hybrid fiber-free-space optical interferometric system to take accurate and rapid optical power measurements leading to partial derivative n/partial derivative T data. The reported results are in agreement with the previously reported research at the lower en
dc.description.sponsorship U.S. Department of Energy (under Award No. DE-FC36-03NT41923) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/full/10.1063/1.2133897
dc.rights © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Appl. Phys. 98, 103512 (2005) and may be found at https://aip.scitation.org/doi/pdf/10.1063/1.2133897 en
dc.subject Interferometry en
dc.subject Optical fibers en
dc.subject Optical properties en
dc.subject Single crystals en
dc.subject Thermal effects en
dc.subject Carbides en
dc.subject Thermo optic effects en
dc.subject Interpolation en
dc.subject Telecommunications en
dc.subject Interferometers en
dc.subject Thermoelectricity en
dc.subject Fabry-Perot interferometers en
dc.subject Optical materials en
dc.subject Optical properties en
dc.subject Optical efficiency en
dc.subject Silicon carbide en
dc.title 6-H single-crystal silicon carbide thermo-optic coefficient measurements for ultrahigh temperatures up to 1273 K in the telecommunications infrared band en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Nabeel Riza, Electrical & Electronic Engineering, University College Cork, Cork, Ireland. +353-21-490-3000 Email: n.riza@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2020-07-14T08:42:56Z
dc.description.version Published Version en
dc.internal.rssid 249311412
dc.contributor.funder U.S. Department of Energy en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress n.riza@ucc.ie en
dc.identifier.articleid 103512 en


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