Vapor-phase passivation of chlorine-terminated Ge(100) using self-assembled monolayers of hexanethiol

Show simple item record Garvey, Shane Holmes, Justin D. Kim, Y. S. Long, Brenda 2020-07-24T10:15:23Z 2020-07-24T10:15:23Z 2020-06-05
dc.identifier.citation Garvey, S., Holmes, J. D., Kim, Y. S., and Long, B. (2020) 'Vapor-phase passivation of chlorine-terminated Ge(100) using self-assembled monolayers of hexanethiol', ACS Applied Materials & Interfaces, 12(26), pp. 29899-29907. doi: 10.1021/acsami.0c02548/acs.jpcc.0c04034 en
dc.identifier.volume 12 en
dc.identifier.issued 26 en
dc.identifier.startpage 29899 en
dc.identifier.endpage 29907
dc.identifier.issn 1944-8252
dc.identifier.doi 10.1021/acsami.0c02548 en
dc.description.abstract Continued scaling of electronic devices shows the need to incorporate high mobility alternatives to silicon, the cornerstone of the semiconductor industry, into modern field effect transistor (FET) devices. Germanium is well-poised to serve as the channel material in FET devices as it boasts an electron and hole mobility more than twice and four times that of Si, respectively. However, its unstable native oxide makes its passivation a crucial step toward its potential integration into future FETs. The International Roadmap for Devices and Systems (IRDS) predicts continued aggressive scaling not only of the device size but also of the pitch in nanowire arrays. The development of a vapor-phase chemical passivation technique will be required to prevent the collapse of these structures that can occur because of the surface tension and capillary forces that are experienced when tight-pitched nanowire arrays are processed via liquid-phase chemistry. Reported here is a vapor-phase process using hexanethiol for the passivation of planar Ge(100) substrates. Results benchmarking it against its well-established liquid-phase equivalent are also presented. X-ray photoelectron spectroscopy was used to monitor the effectiveness of the developed vapor-phase protocol, where the presence of oxide was monitored at 0, 24, and 168 h. Water contact angle measurements compliment these results by demonstrating an increase in hydrophobicity of the passivated substrates. Atomic force microscopy monitored the surface topology before and after processing to ensure the process does not cause roughening of the surface, which is critical to demonstrate suitability for nanostructures. It is shown that the 200 min vapor-phase passivation procedure generates stable, passivated surfaces with less roughness than the liquid-phase counterpart. en
dc.description.sponsorship Enterprise Ireland (Grant EI IP 2018 0757A) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher ACS Publications en
dc.rights © 2020, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces after technical editing by the publisher. To access the final edited and published work see en
dc.subject Germanium en
dc.subject Passivation en
dc.subject Self-assembled monolayers en
dc.subject Oxidation en
dc.subject X-ray photoelectron spectroscopy en
dc.subject Thiols en
dc.title Vapor-phase passivation of chlorine-terminated Ge(100) using self-assembled monolayers of hexanethiol en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Brenda Long, School of Chemistry & AMBER Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en Access to this article is restricted until 12 months after publication by request of the publisher. en 2021-06-05
dc.description.version Accepted Version en
dc.internal.rssid 522594936
dc.contributor.funder Enterprise Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ACS Applied Materials & Interfaces en
dc.internal.IRISemailaddress en
dc.internal.IRISemailaddress en

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