The role of oxide traps aligned with the semiconductor energy gap in MOS systems
Caruso, Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K.
Date:
2020-08-31
Copyright:
© 2020, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation:
Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Gity, F., Palestri, P., Esseni, D., Selmi, L. and Hurley, P. K. (2020) 'The role of oxide traps aligned with the semiconductor energy gap in MOS systems', IEEE Transactions on Electron Devices, 67(10), pp. 4372-4378. doi: 10.1109/TED.2020.3018095
Abstract:
This work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is considered, the traps with energy aligned to the semiconductor bandgap play a significant role in the frequency dispersion of the capacitance–voltage ( C–V ) and conductance–voltage ( G–V ) characteristics of metal–oxide–semiconductor (MOS) systems. The work also highlights that a nonlocal model for tunneling into interface states is mandatory to reproduce experiments when carrier quantization in the inversion layer is accounted for. A model, including these ingredients, is used to evaluate the energy and depth distribution of oxide traps in a n-In 0.53 Ga 0.47 As/Al 2 O 3 MOS system and is able to accurately fit the C–V frequency dispersion from depletion to weak inversion. The oxide trap distribution determined from the C–V response predicts the corresponding G–V dispersion with frequency.
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