Isotropic conduction and negative photoconduction in ultrathin PtSe2 films

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dc.contributor.author Urban, Francesca
dc.contributor.author Gity, Farzan
dc.contributor.author Hurley, Paul K.
dc.contributor.author McEvoy, Niall
dc.contributor.author Di Bartolomeo, Antonio
dc.date.accessioned 2020-11-09T14:15:40Z
dc.date.available 2020-11-09T14:15:40Z
dc.date.issued 2020-11-09
dc.identifier.citation Urban, F., Gity, F., Hurley, P. K., McEvoy, N. and Bartolomeo, A. D. (2020) 'Isotropic conduction and negative photoconduction in ultrathin PtSe2 films', Applied Physics Letters, 117(19), 193102 (7 pp). doi: 10.1063/5.0021009 en
dc.identifier.volume 117 en
dc.identifier.issued 19 en
dc.identifier.startpage 1 en
dc.identifier.endpage 7 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/10745
dc.identifier.doi 10.1063/5.0021009 en
dc.description.abstract PtSe2 ultrathin films are used as the channel of back-gated field-effect transistors that are investigated at different temperatures and under super-continuous white laser irradiation. The temperature-dependent behavior confirms the semiconducting nature of multilayer PtSe2, with p-type conduction, a hole field-effect mobility up to 40 cm2 V−1 s−1, and significant gate modulation. Electrical conduction measured along different directions shows isotropic transport. A reduction of PtSe2 channel conductance is observed under exposure to light. Such a negative photoconductivity is explained by a photogating effect caused by photo-charge accumulation in SiO2 and at the Si/SiO2 interface. en
dc.description.sponsorship Ministero dell’Istruzione, dell’Università e della Ricerca (MIUR, Project Nos. Pico & Pro ARS01_01061 and RINASCIMENTO ARS01_01088) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics en
dc.relation.uri https://aip.scitation.org/doi/abs/10.1063/5.0021009
dc.rights © 2020 Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 117, 193102 (2020) and may be found at https://aip.scitation.org/doi/10.1063/5.0021009 en
dc.subject PtSe2 en
dc.subject Ultrathin films en
dc.subject Electronic devices en
dc.subject Transistors en
dc.subject Conduction en
dc.subject Semiconductor technology en
dc.subject 2D material en
dc.title Isotropic conduction and negative photoconduction in ultrathin PtSe2 films en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Farzan Gity, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: farzan.gity@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2020-11-09T13:59:31Z
dc.description.version Accepted Version en
dc.internal.rssid 543267254
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Ministero dell’Istruzione, dell’Università e della Ricerca en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress farzan.gity@tyndall.ie en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.identifier.articleid 193102 en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/15/SIRG/3329/IE/Synthesis and Characterisation of 2D-Material Heterostacks/ en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/ en


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