Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

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dc.contributor.author Finot, Sylvain
dc.contributor.author Grenier, Vincent
dc.contributor.author Zubialevich, Vitaly
dc.contributor.author Bougerol, Catherine
dc.contributor.author Pampili, Pietro
dc.contributor.author Eymery, Joël
dc.contributor.author Parbrook, Peter J.
dc.contributor.author Durand, Christophe
dc.contributor.author Jacopin, Gwénolé
dc.date.accessioned 2020-12-10T11:46:46Z
dc.date.available 2020-12-10T11:46:46Z
dc.date.issued 2020-12-03
dc.identifier.citation Finot, S., Grenier, V., Zubialevich, V., Bougerol, C., Pampili, P., Eymery, J., Parbrook, P. J., Durand, C. and Jacopin, G. (2020) 'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells', Applied Physics Letters, 117(22), 221105 (5pp). doi: 10.1063/5.0023545 en
dc.identifier.volume 117 en
dc.identifier.issued 22 en
dc.identifier.startpage 1 en
dc.identifier.endpage 5 en
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/10828
dc.identifier.doi 10.1063/5.0023545 en
dc.description.abstract Relaxation of tensile strain in AlGaN heterostructures grown on a GaN template can lead to the formation of cracks. These extended defects locally degrade the crystal quality, resulting in a local increase in non-radiative recombinations. The effect of such cracks on the optical and structural properties of core–shell AlGaN/AlGaN multiple quantum wells grown on GaN microwires is comprehensively characterized by means of spectrally and time-correlated cathodoluminescence (CL). We observe that the CL blueshifts near a crack. By performing 6 x 6 k.p simulations in combination with transmission electron microscopy analysis, we ascribe this shift to the strain relaxation by the free surface near cracks. By simultaneously recording the variations of both the CL lifetime and the CL intensity across the crack, we directly assess the carrier dynamics around the defect at T ¼ 5 K. We observe that the CL lifetime is reduced typically from 500 ps to less than 300 ps and the CL intensity increases by about 40% near the crack. The effect of the crack on the optical properties is, therefore, of two natures. First, the presence of this defect locally increases non-radiative recombinations, while at the same time, it locally improves the extraction efficiency. These findings emphasize the need for time-resolved experiments to avoid experimental artifacts related to local changes of light collection. en
dc.description.sponsorship Agence Nationale de la Recherche (“Investissements d’avenir” program ANR-15-IDEX-02); Irish Research Council and Campus France (French-Irish program ULYSSES); Science Foundation Ireland (Award Nos. 18/TIDA/6066 and 12/RC/2276_P2) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics en
dc.rights © 2020, the Authors. Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author(s) and AIP Publishing. This article appeared as: Finot, S., Grenier, V., Zubialevich, V., Bougerol, C., Pampili, P., Eymery, J., Parbrook, P. J., Durand, C. and Jacopin, G. (2020) 'Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells', Applied Physics Letters, 117(22), 221105 (5pp), doi: 10.1063/5.0023545, and may be found at https://doi.org/10.1063/5.0023545 en
dc.subject AIGaN en
dc.subject GaN en
dc.subject Non-radiative recombinations en
dc.subject Cathodoluminescence (CL) en
dc.title Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Vitaly Zubialevich, Tyndall Photonics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: vitaly.zubialevich@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2021-12-03
dc.date.updated 2020-12-10T10:31:42Z
dc.description.version Published Version en
dc.internal.rssid 547060169
dc.contributor.funder Agence Nationale de la Recherche en
dc.contributor.funder Irish Research Council en
dc.contributor.funder Campus France en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress vitaly.zubialevich@tyndall.ie en


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