Design guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidth
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O'Reilly, Eoin P.
Institution of Engineering and Technology (IET)
This study presents experimental and simulation results for edge-coupled waveguide unitravelling-carrier (UTC) photodiodes based on an InGaAs/InP heterostructure. Experimental results are used to calibrate the numerical device simulator. The authors study how different aspects of the UTC photodiode epistructure and contacts impact on the overall device bandwidth, calculating the photoresponse for different structural parameters and doping concentration profiles. The effect of these parameters on the 3-dB cut-off frequency is studied, and design guidelines for UTC photodiodes with improved performance are presented. The UTC photodiode simulated using authors' design guidelines has a 3 dB cut-off frequency of 49 GHz, a factor of 2 larger than the 25 GHz cut-off of the fabricated UTC photodiode.
Photodiodes , Unitravelling-carrier , UTC , InGaAs/InP heterostructure , Photoresponse , 3-dB cut-off frequency , UTC photodiodes , Edge-coupled waveguide unitravelling-carrier
Razavi, P., Schulz, S., Roycroft, B., Corbett, B. and O'Reilly, E. P. (2019) 'Design guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidth', IET Optoelectronics, 13(6), pp. 267-272. doi: 10.1049/iet-opt.2018.5171
© 2019, The Institution of Engineering and Technology. This paper is a postprint of a paper submitted to and accepted for publication in IET Optoelectronics, and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library: https://digital-library.theiet.org/content/journals/10.1049/iet-opt.2018.5171