Design guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidth

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dc.contributor.author Razavi, Pedram
dc.contributor.author Schulz, Stefan
dc.contributor.author Roycroft, Brendan
dc.contributor.author Corbett, Brian
dc.contributor.author O'Reilly, Eoin P.
dc.date.accessioned 2021-01-07T11:35:14Z
dc.date.available 2021-01-07T11:35:14Z
dc.date.issued 2019-05-21
dc.identifier.citation Razavi, P., Schulz, S., Roycroft, B., Corbett, B. and O'Reilly, E. P. (2019) 'Design guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidth', IET Optoelectronics, 13(6), pp. 267-272. doi: 10.1049/iet-opt.2018.5171 en
dc.identifier.volume 13 en
dc.identifier.issued 6 en
dc.identifier.startpage 267 en
dc.identifier.endpage 272 en
dc.identifier.issn 1751-8768
dc.identifier.uri http://hdl.handle.net/10468/10869
dc.identifier.doi 10.1049/iet-opt.2018.5171 en
dc.description.abstract This study presents experimental and simulation results for edge-coupled waveguide unitravelling-carrier (UTC) photodiodes based on an InGaAs/InP heterostructure. Experimental results are used to calibrate the numerical device simulator. The authors study how different aspects of the UTC photodiode epistructure and contacts impact on the overall device bandwidth, calculating the photoresponse for different structural parameters and doping concentration profiles. The effect of these parameters on the 3-dB cut-off frequency is studied, and design guidelines for UTC photodiodes with improved performance are presented. The UTC photodiode simulated using authors' design guidelines has a 3 dB cut-off frequency of 49 GHz, a factor of 2 larger than the 25 GHz cut-off of the fabricated UTC photodiode. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institution of Engineering and Technology (IET) en
dc.rights © 2019, The Institution of Engineering and Technology. This paper is a postprint of a paper submitted to and accepted for publication in IET Optoelectronics, and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library: https://digital-library.theiet.org/content/journals/10.1049/iet-opt.2018.5171 en
dc.subject Photodiodes en
dc.subject Unitravelling-carrier en
dc.subject UTC en
dc.subject InGaAs/InP heterostructure en
dc.subject Photoresponse en
dc.subject 3-dB cut-off frequency en
dc.subject UTC photodiodes en
dc.subject Edge-coupled waveguide unitravelling-carrier en
dc.title Design guidelines for edge-coupled waveguide unitravelling carrier photodiodes with improved bandwidth en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Stefan Schulz, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: stefan.schulz@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2021-01-07T11:16:27Z
dc.description.version Accepted Version en
dc.internal.rssid 500166323
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IET Optoelectronics en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress stefan.schulz@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/ en
dc.identifier.eissn 1751-8776


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