Composition dependence of photoluminescence properties of InxAl1-xN/AlGaN quantum wells
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Accepted version
Date
2016-08-31
Authors
Zubialevich, Vitaly Z.
Alam, Shahab N
Li, Haoning
Parbrook, Peter J.
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing
Published Version
Abstract
A series of InAlN/AlGaN five quantum well (QW) heterostructures was prepared by metal-organic vapour phase epitaxy to investigate their photoluminescence (PL) properties as a function of indium content in QWs at aluminium content in barriers fixed at 59%. In addition to the expected redshift of the emission spectrum, a strong rise of PL efficiency was observed with increasing indium content from 12.5 to 18%. Use of a higher indium content leads to a further redshift but also to a sudden and sharp degradation of PL efficiency. Reasons for the observed behaviour are discussed in detail, which raise the possibility of a transition to a type II band lineup in the InAlN-AlGaN system.
Description
Keywords
InAlN , AlInN , Quantum well , Photoluminescence , Type II band lineup
Citation
Zubialevich, V. Z., Alam, S. N., Li, H. N. and Parbrook, P. J. (2016) 'Composition dependence of photoluminescence properties of InxAl1−xN/AlGaN quantum wells', Journal of Physics D: Applied Physics, 49(38), 385105 (8 pp). doi: 10.1088/0022-3727/49/38/385105
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Copyright
© 2016 IOP Publishing Ltd. This is the Accepted Manuscript version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/0022-3727/49/38/385105