GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes
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Accepted Version
Date
2016-12-12
Authors
Dinh, Duc V.
Quan, Zhiheng
Roycroft, Brendan
Parbrook, Peter J.
Corbett, Brian
Journal Title
Journal ISSN
Volume Title
Publisher
Optical Society of America
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Abstract
We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (112¯2) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high-quality (112¯2) GaN templates, which were prepared on patterned (101¯2) 𝑟-plane sapphire substrates. The measured frequency response at −3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-return-to-zero on-off keying modulation scheme. This indicates that (112¯2) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications.
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Keywords
Modulation bandwidth , Communication , Sapphire
Citation
Dinh, D. V., Quan, Z., Roycroft, B., Parbrook, P. J. and Corbett, B. (2016) 'GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes', Optics Letters, 41(24), pp. 5752-5755. doi: 10.1364/OL.41.005752
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© 2016, Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.