Thin-film magnetics-on-silicon integrated transformer for isolated signal and power coupling applications

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Date
2020-05-21
Authors
Pavlovic, Zoran
Podder, Pranay
Dobbyn, Dermot
Masood, Ansar
Wei, Guannan
Lordan, Daniel
McCloskey, Paul
O'Mathuna, Cian
O'Driscoll, Séamus
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VDE Verlag
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Abstract
Smart Switches for future generation power systems will be realised by densely integrating GaN switches with CMOS drive and control logic, enabling higher switching frequencies, greater efficiency and smart gate driver features such as for improved switch protection and offering improved control telemetry. The realization of such systems will benefit from the integration of power coupling and signal isolating transformers, either on-chip or at package-level. This work reports the development of a thin-film magnetics-on-silicon (MoS) micro-transformer for functional (operational grade insulation) galvanic isolation of the gate drive logic signal. The micro-transformer will be integrated with GaN switches and CMOS logic circuits to implement applications such as high frequency resonant LLC converter, in lower voltage applications, such as for 12, 24 or 48V systems.
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Keywords
Smart Switches , Future generation power systems , GaN switches , CMOS drive , Control logic
Citation
Pavlovic, Z., Podder, P., Dobbyn, D., Masood, A., Wei, G., Lordan, D., McCloskey, P., O’Mathuna, C. and O’Driscoll, S. (2020) ‘Thin-film magnetics-on-silicon integrated transformer for isolated signal and power coupling applications’, CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, Berlin, Germany, 24-26 March, pp. 264-268. Available at: https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9097692 (Accessed: 18 August 2021)
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