Data transmission at 1.3 µm using hybrid integrated silicon interposer and GalnNAs/GaAs electroabsorption modulator
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Accepted Version
Date
2018-11-15
Authors
Guina, Mircea
Sheehan, Robert
Isoaho, Riku
Viheriälä, Jukka
Harjanne, Mikko
Malacarne, Antonio
Falconi, Fabio
Aalto, Timo
Peters, Frank H.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
Transmission of NRZ data at 12.5 Gbit/s is demonstrated using a hybrid integrated silicon photonics optical interconnect. The interconnect comprises a dilute nitride quantum well electroabsorption modulator on GaAs substrate, which is optically coupled to large core Si waveguide.
Description
Keywords
Optical waveguides , Silicon , Modulation , Photonics , Optical interconnections , Gallium arsenide , Substrates
Citation
Guina, M., Sheehan, R., Isoaho, R., ; Viheriälä, J., Harjanne, M., Malacarne, A., Falconi, F., Aalto, T. and Peters, F. H. (2018) 'Data transmission at 1.3 µm using hybrid integrated silicon interposer and GalnNAs/GaAs electroabsorption modulator', 2018 European Conference on Optical Communication (ECOC), Rome, Italy, 23 - 27 September, pp. 1-3. doi: 10.1109/ECOC.2018.8535166
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