Electron-phonon scattering and thermoelectric transport in p-type PbTe from first principles

Abstract

We present a first-principles-based model of electron-phonon scattering mechanisms and thermoelectric transport at the L and Σ valleys in p-type PbTe, accounting for their thermally induced shifts. Our calculated values of all thermoelectric transport parameters at room temperature are in very good agreement with experiments for a wide range of doping concentrations. Scattering due to longitudinal optical phonons is the main scattering mechanism in p-type PbTe, while scattering due to transverse optical modes is the weakest. The L valleys contribute most to thermoelectric transport at 300 K due to the sizable energy difference between the L and Σ valleys. We show that both scattering between the L and Σ valleys and additional transport channels of the Σ valleys are beneficial for the overall thermoelectric performance of p-type PbTe at 300 K. Our findings thus support the idea that materials with high valley degeneracy may be good thermoelectrics.