Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission
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Date
2019-09-12
Authors
Ochalski, Tomasz J.
Morales, Juan S. D.
Gandan, Shumithira
Huffaker, Diana L.
Kim, Hyunseok
O'Faolain, Liam
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Journal ISSN
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Publisher
Society of Photo-optical Instrumentation Engineers (SPIE)
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Abstract
In this work, we experimentally study the carrier and refractive index dynamics of InGaAs nanopillar grown on a Si on insulator (SOI) substrate. The recombination process of the InGaAs NP is characterized with different optical techniques. Temperature dependent photoluminescence (PL) at 0.5mW excitation power is carried out to determine the influence of temperature on carrier dynamics. The radiative recombination lifetime has been studied at 7K from time-resolved photoluminescence (TRPL) experiments at a certain excitation power. The optimal combination of pitch (separation between NPs) and diameter in the growth process of this nanostructure has also been measured. These results will contribute to further optimization of the InGaAs nanolaser for integration of III-V optoelectronics on SOI substrates.
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Keywords
III-V on silicon , Nanolasers , SOI , Time resolved photoluminescence
Citation
Ochalski, T. J., Morales, J. S. D., Gandan, S., Huffaker, D. L., Kim, H. and O'Faolain, L. (2019) 'Carrier and refractive index dynamics in core-shell nanolasers grown on silicon during spontaneous and stimulated emission', SPIE Nanoscience + Engineering, San Diego, California, United States, 11-15 August. Subramania, G. S. and Foteinopoulou, S. (eds.) Proceedings of SPIE, Volume 11081, Active Photonic Platforms XI, 110812B (5pp). doi: 10.1117/12.2529494
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© 2019, Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.