• Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters 

  Patra, Saroj Kanta; Schulz, Stefan (AIP Publishing, 2017-09-05)

  In this work, we present a detailed analysis of the second-order piezoelectric effect in c-plane InxGa1xN/GaN quantum dots and its consequences for electronic and optical properties of these systems. Special attention is ...
• Airborne non-contact and contact broadband ultrasounds for frequency attenuation profile estimation of cementitious materials 

  Gosálbez, J.; Wright, William M. D.; Jiang, W.; Carrión, A.; Genovés, V.; Bosch, I. (Elsevier B.V., 2018-03-28)

  In this paper, the study of frequency-dependent ultrasonic attenuation in strongly heterogeneous cementitious materials is addressed. To accurately determine the attenuation over a wide frequency range, it is necessary to ...
• PCB embedded bondwire inductors with discrete thin film magnetic core for power supply in package 

  Kulkarni, Santosh; Li, Dai; Jordan, Declan; Wang, Ningning; Ó Mathúna, S. Cian (Institute of Electrical and Electronics Engineers (IEEE), 2018-01-29)

  This paper details the design, assembly, and detailed characterization of Printed Circuit Board (PCB) embedded thin magnetic film inductor for Power Supply in Package applications. Solenoidal inductors were assembled on ...
• Novel high frequency electrical characterization technique for magnetic passive devices 

  Fernandez, Cristina; Pavlovic, Zoran; Kulkarni, Santosh; McCloskey, Paul; Ó Mathúna, S. Cian (Institute of Electrical and Electronics Engineers (IEEE), 2018-01-28)

  Integrated magnetic components are key elements of the Power Supply on Chip modules. Due to the application requirements, these magnetic devices work at very high frequency and have low inductances. Conventional small-signal ...
• Fast growth of smooth AlN in a 3 x 2 showerhead-type vertical flow MOVPE reactor 

  Zubialevich, Vitaly Z.; Pampili, Pietro; Parbrook, Peter J. (Wiley, 2018-01-09)

  The conditions required for a high growth rate of AlN in a 3 × 2″ showerhead-type vertical flow metalorganic vapor phase epitaxy (MOVPE) reactor are studied. It is found that at the standard growth conditions (low V/III, ...

View more