• Deeply etched inner-cavity pit reflector 

  Dernaika, Mohamad; Caro, Ludovic; Kelly, Niall P.; Alexander, Justin K.; Dubois, Fabien; Morrissey, Patrick E.; Peters, Frank H. (Institute of Electrical and Electronics Engineers (IEEE), 2017-02)

  A deeply etched pit reflector is presented in this paper. The pit is not depth sensitive and has a comparable reflection and loss to a slot. Moreover, a two-section 750 μm laser cavity based on the pits is demonstrated. ...
• Multichannel ultrasonic data communications in air using range-dependent modulation schemes 

  Jiang, Wentao; Wright, William M. D. (Institute of Electrical and Electronics Engineers (IEEE), 2016-01)

  There are several well-developed technologies of wireless communication such as radio frequency (RF) and infrared (IR), but ultrasonic methods can be a good alternative in some situations. A multichannel airborne ultrasonic ...
• Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation 

  Gity, Farzan; Byun, Ki Yeol; Lee, Ko-Hsin; Cherkaoui, Karim; Hayes, John M.; Morrison, Alan P.; Colinge, Cindy; Corbett, Brian M. (AIP Publishing, 2012)

  The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400 degrees C for 30 min was used to improve the forward characteristics ...
• InAlAs solar cell on a GaAs substrate employing a graded InxGa1-xAs-InP metamorphic buffer layer 

  Mathews, Ian P.; O'Mahony, Donagh; Gocalińska, Agnieszka M.; Manganaro, Marina; Pelucchi, Emanuele; Schmidt, Michael; Morrison, Alan P.; Corbett, Brian M. (AIP Publishing, 2013)

  Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 mu m thick compositionally graded InxGa1-xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed ...
• Crystal defect topography of Stranski-Krastanow quantum dots by atomic force microscopy 

  Gradkowski, Kamil; Sadler, Thomas C.; Mereni, Lorenzo O.; Dimastrodonato, Valeria; Parbrook, Peter J.; Huyet, Guillaume; Pelucchi, Emanuele (AIP Publishing, 2010)

  We demonstrate a technique to monitor the defect density in capped quantum dot (QD) structures by performing an atomic force microscopy (AFM) of the final surface. Using this method we are able to correlate their density ...

View more