TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications

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dc.contributor.author Monaghan, Scott
dc.contributor.author Cherkaoui, Karim
dc.contributor.author O'Connor, É
dc.contributor.author Djara, Vladimir
dc.contributor.author Hurley, Paul K.
dc.contributor.author Oberbeck, L.
dc.contributor.author Tois, E.
dc.contributor.author Wilde, L.
dc.contributor.author Teichert, S.
dc.date.accessioned 2022-06-22T11:51:43Z
dc.date.available 2022-06-22T11:51:43Z
dc.date.issued 2009-02-10
dc.identifier.citation Monaghan, S., Cherkaoui, K., O'Connor, É., Djara, V., Hurley, P. K., Oberbeck, L., Tois, E., Wilde, L. and Teichert, S, (2009) 'TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications', IEEE Electron Device Letters, 30(3), pp. 219-221. doi: 10.1109/LED.2008.2012356 en
dc.identifier.volume 30 en
dc.identifier.issued 3 en
dc.identifier.startpage 219 en
dc.identifier.endpage 221 en
dc.identifier.issn 0741-3106
dc.identifier.uri http://hdl.handle.net/10468/13309
dc.identifier.doi 10.1109/LED.2008.2012356 en
dc.description.abstract We provide the first report of the structural and electrical properties of TiN/ZrO 2 /Ti/Al metal-insulator-metal capacitor structures, where the ZrO 2 thin film (7-8 nm) is deposited by ALD using the new zirconium precursor ZrD-04, also known as Bis(methylcyclopentadienyl) methoxymethyl. Measured capacitance-voltage ( C - V ) and current-voltage ( I - V ) characteristics are reported for premetallization rapid thermal annealing (RTP) in N 2 for 60 s at 400degC, 500degC, or 600degC. For the RTP at 400degC, we find very low leakage current densities on the order of nanoamperes per square centimeter at a gate voltage of 1 V and low capacitance equivalent thickness values of ~ 0.9 nm at a gate voltage of 0 V. The dielectric constant of ZrO 2 is 31 plusmn 2 after RTP treatment at 400degC. en
dc.description.sponsorship Sixth Framework Programme (REALISE Project NMP4-CT-2006-016172); Science Foundation Ireland (Grant 05/IN/1751); Government of Ireland (National Development Plan); European Commission (European Union Structural Funds) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Institute of Electrical and Electronics Engineers (IEEE) en
dc.rights © 2009, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject ALD en
dc.subject Capacitor en
dc.subject Dynamic random access memory (DRAM) en
dc.subject Effective dielectric constant en
dc.subject Gate oxide en
dc.subject High-k en
dc.subject Metal–insulator–metal (MIM) en
dc.subject ZrD-04 en
dc.subject ZrO2 en
dc.title TiN/ZrO2/Ti/Al metal–insulator–metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Scott Monaghan, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: scott.monaghan@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2022-06-20T10:06:56Z
dc.description.version Accepted Version en
dc.internal.rssid 583915893
dc.contributor.funder Sixth Framework Programme en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Government of Ireland en
dc.contributor.funder European Commission en
dc.description.status Peer reviewed en
dc.identifier.journaltitle IEEE Electron Device Letters en
dc.internal.copyrightchecked No Google scholar indicates mandate but please check:- Fraunhofer-Gesellschaft cached Effective date: 2008/7 Embargo: 12 months Funding acknowledgment in paper: â ¦Fraunhofer â ¦ Science Foundation Ireland cached Effective date: 2009/2 Embargo: 6 months Funding acknowledgment in paper: â ¦Science Foundation Ireland under Grant 05/IN/1751 â ¦
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress scott.monaghan@tyndall.ie en
dc.identifier.eissn 1558-0563


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