High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

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2014-07-28
Authors
Burke, Micheal
Blake, Alan
Djara, Vladimir
O'Connell, Dan
Povey, Ian M.
Cherkaoui, Karim
Monaghan, Scott
Scully, Jim
Murphy, Richard
Hurley, Paul K.
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American Institute of Physics on behalf of the American Vacuum Society
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Abstract
The authors report on the structural and electrical properties of TiN/Al2O3/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm2 and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm2 at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.
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TiN/Al2O3/TiN metal–insulator–metal (MIM) capacitor structures
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Burke, M., Blake, A., Djara, V., O'Connell, D., Povey, I. M., Cherkaoui, K., Monaghan, S., Scully, J., Murphy, R., Hurley, P. K., Pemble, M. E. and Quinn, A. J. (2014) 'High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition', Journal of Vacuum Science and Technology A, 33(1), 01A103 (5pp). doi: 10.1116/1.4891319
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© 2014, American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as: Burke, M., Blake, A., Djara, V., O'Connell, D., Povey, I. M., Cherkaoui, K., Monaghan, S., Scully, J., Murphy, R., Hurley, P. K., Pemble, M. E. and Quinn, A. J. (2014) 'High aspect ratio iridescent three-dimensional metal--insulator--metal capacitors using atomic layer deposition', Journal of Vacuum Science and Technology A, 33(1), 01A103 (5pp), doi: 10.1116/1.4891319, and may be found at: https://doi.org/10.1116/1.4891319