Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET characteristics?

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Date
2012
Authors
Cherkaoui, Karim
Djara, Vladimir
O'Connor, Éamon
Lin, Jun
Negara, Muhammad A.
Povey, Ian M.
Monaghan, Scott
Hurley, Paul K.
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IOP Publishing Ltd
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Abstract
In this paper we present the electrical characteristics of Metal/Al2O3/In0.53Ga0.47As/InP MOS capacitor (MOSCAP) structures formed using a relatively straightforward capacitor process flow and for MOSCAPs which experience the full process flow of an In0.53Ga0.47As n channel MOSFET. From analysis of the capacitance-voltage response over a range of ac signal frequencies fixed oxide charge densities and interface state concentrations are determined for the MOSCAP structures and the impact of forming gas annealing on oxide and interface state densities is presented. The MOSCAP results are compared to the properties of fully processed metal/Al2O3/In0.53Ga0.47As/InP n channel MOSFETs, and the results indicate that the findings from the MOSCAPS do translate to the measured InGaAs MOSFET characteristics.
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Metal/Al2O3/In0.53Ga0.47As/InP MOS capacitor (MOSCAP) , In0.53Ga0.47As n channel MOSFET
Citation
Cherkaoui, K., Djara, Vladimir., O'Connor, É., Lin, J., Negara, M. A., Povey, I. M., Monaghan, S. and Hurley, P. K. (2012) 'Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET characteristics?', ECS Transactions, 45(3), pp. 79-88. doi: 10.1149/1.3700874
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© 2012, The Electrochemical Society.