Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
Loading...
Files
Accepted Version
Date
2009-01
Authors
Miranda, Enrique
O'Connor, Éamon
Hughes, Gregory
Casey, Patrick
Cherkaoui, Karim
Monaghan, Scott
Long, Rathnait D.
O'Connell, Dan
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
IOP Publishing Ltd
Published Version
Abstract
The post-breakdown (BD) current-voltage (I-V) characteristics in MgO/Si and MgO/InP stacks with metal gate were investigated. We show that both stacks exhibit the soft and hard BD conduction modes and that the magnitude of the post-BD currents depends statistically on the substrate material, being larger in the case of the InP samples. This is contrary to what happens with the current in the fresh devices, which irrespective of the InP surface treatment, is larger for the Si samples. A comparative analysis of the post-BD conduction characteristics and direct evidences of the localized thermal effects on the metal gate electrode of both structures are presented.
Description
Keywords
Semiconductor substrate material , Post-breakdown current , MgO dielectric layers
Citation
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D. and Hurley, P. (2009) 'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers', ECS Transactions, 25(6), pp. 79-86. doi: 10.1149/1.3206608
Link to publisher’s version
Copyright
© 2009, The Electrochemical Society.