Spatial statistics for micro/nanoelectronics and materials science
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Accepted Version
Date
2012-06-25
Authors
Miranda, Enrique
Jiménez, D.
Suñé, Jordi
O'Connor, Éamon
Monaghan, Scott
Cherkaoui, Karim
Hurley, Paul K.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
Spatial statistics is a specialized branch of statistics aimed to provide information about the locations of randomly distributed objects in 1, 2 or 3 dimensions. The analysis involves data exploration, parameter estimation, model fitting and hypothesis formulation. In particular, in this work, we present some recent advances in the characterization of the spatial distribution of breakdown spots over the gate electrode of Metal-Insulator-Semiconductor and Metal-Insulator-Metal structures. The spots are regarded as a two-dimensional point pattern, which is analyzed using intensity plots, spatial counting methods, inter-event distance histograms and functional summary estimators. The methods reported here are general so that they can be applied to many different research fields.
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Keywords
Correlation , Logic gates , Silicon , Histograms , Hafnium compounds , Indexes
Citation
Miranda, E., Jiménez, D., Suñé, J., O'Connor, É., Monaghan, S., Cherkaoui, K., Hurley, P. K. (2012) 'Spatial statistics for micro/nanoelectronics and materials science', 2012 28th International Conference on Microelectronics Proceedings, Nis, Serbia, 13-16 May, pp. 23-30. doi: 10.1109/MIEL.2012.6222790
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© 2012, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.