Post-breakdown conduction in metal gate/MgO/InP structures

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Date
2009-09-04
Authors
Miranda, Enrique
O'Connor, Éamon
Hughes, Gregory
Casey, P.
Cherkaoui, Karim
Monaghan, Scott
Long, Rathnait D.
O'Connell, Dan
Hurley, Paul K.
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Institute of Electrical and Electronics Engineers (IEEE)
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Abstract
The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-kappa/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for SiO2. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.
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Keywords
Indium phosphide , Dielectric substrates , Thermal conductivity , Leakage current , Conducting materials , Dielectric materials , Semiconductor films , Breakdown voltage , Dielectric breakdown , Semiconductor thin films
Citation
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D. and Hurley, P. K. (2009) 'Post-breakdown conduction in metal gate/MgO/InP structures', 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Suzhou, China, 6-10 July, pp. 71-74. doi: 10.1109/IPFA.2009.5232695
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