Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures
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Date
2016-06
Authors
Baig, Joveria
Roycroft, Brendan
O'Callaghan, James
Robert, Cecil
Ye, N.
Gleeson, Matthew
Gocalińska, Agnieszka M.
Pelucchi, Emanuele
Townsend, Paul D
Corbett, Brian M.
Journal Title
Journal ISSN
Volume Title
Publisher
Optical Publishing Group
Published Version
Abstract
Quantum well intermixing in 2μm emitting structures is presented for the first time. A photoluminescence and electroluminescence differential shift of 160nm is achieved between SiNx and SiO2 capped regions demonstrating potential for monolithic integration.
Description
Keywords
Gallium alloys , Gallium compounds , Indium alloys , Light , Quantum well lasers , Semiconducting indium gallium arsenide , Semiconductor alloys , Silica , Differential shifts , Monolithic integration , Multiple quantum-well structures , Quantum well intermixing , Semiconductor quantum wells
Citation
Baig, J., Roycroft, B., O’Callaghan, J., Robert, C., Ye, N., Gleeson, M., Gocalinska, A., Pelucchi, E., Townsend, P. and Corbett, B. (2016) ‘Quantum Well Intermixing in 2 μm InGaAs Multiple Quantum Well structures’, in Conference on Lasers and Electro-Optics. San Jose, California: OSA, SM4R.4 (2 pp). doi: 10.1364/CLEO_SI.2016.SM4R.4
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© 2016 Optical Society of America