Materials porosity

Colm O'Dwyer

Materials porosity

Files

O'Dwyer_2022_ECS_Trans._109_37.pdf(2.9 MB)

Published version

Date

2022-09

Authors

Colm O'Dwyer

Publisher

Electrochemical Society; IOP Publishing

Published Version

10.1149/10903.0037ecst

Abstract

Big pores, small pores, ordered pores, random pores – they all have a function and as is often found, show behaviour in new materials that is not always predicted or obvious at the outset. I started my research journey trying to put extremely thin films onto near-perfect III-V crystals to control (opto)electronic properties and when the first TEM on our campus showed remarkable pore growth and structure in InP almost 21 years ago, the electrochemical modification of the InP made more sense. In this paper, I will summarise a few aspects of research into porous materials and semiconductors, from porous InP that led to studies of other porous semiconductors such as silicon, GaN, ZnO and Indium Tin oxide (ITO), to periodically ordered photonic crystal porous structures and some optical, thermal and electrochemical properties, photocatalysis, studies in batteries and related that were enabled or modified by the porous structure.

Keywords

Pores , Materials , Porous InP , Semiconductors

Citation

O’Dwyer, C. (2022) ‘(Invited) Material porosity’, ECS Transactions, 109(3), pp. 37–59. https://doi.org/10.1149/10903.0037ecst