Electroless nickel/gold Ohmic contacts to p-type GaN

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dc.contributor.author Lewis, Liam
dc.contributor.author Casey, Declan P.
dc.contributor.author Jeyaseelan, Arockia Vimal
dc.contributor.author Rohan, James F.
dc.contributor.author Maaskant, Pleun P.
dc.date.accessioned 2014-03-18T10:48:00Z
dc.date.available 2014-03-18T10:48:00Z
dc.date.issued 2008-02
dc.identifier.citation LEWIS, L., CASEY, D. P., JEYASEELAN, A. V., ROHAN, J. F. & MAASKANT, P. P. 2008. Electroless nickel/gold Ohmic contacts to p-type GaN. Applied Physics Letters, 92, 062113. http://dx.doi.org/10.1063/1.2842425 en
dc.identifier.volume 92 en
dc.identifier.issued 6 en
dc.identifier.startpage 062113 en
dc.identifier.endpage 062113-3 en
dc.identifier.issn 0003-6951
dc.identifier.issn 1077-3118
dc.identifier.uri http://hdl.handle.net/10468/1470
dc.identifier.doi 10.1063/1.2842425
dc.description.abstract A solution based approach to forming Ohmic contacts to p-type GaN is described. Electroless plated Ni/Au contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities rho(c) in the region of 10(-2) Omega cm(2). These values are readily achieved after a rapid thermal annealing in an O-2 atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent (I-L) and current-voltage (I-V) measurements from light emitting diodes formed using an electroless p-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics en
dc.relation.uri http://scitation.aip.org/content/aip/journal/apl/92/6/10.1063/1.2842425
dc.rights Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 92 (6), 062113 and may be found at http://scitation.aip.org/content/aip/journal/apl/92/6/10.1063/1.2842425 en
dc.subject Ohmic contacts en
dc.subject Tunnelling en
dc.subject III-V semiconductors en
dc.subject Photoconductivity en
dc.subject X-ray diffraction en
dc.subject Rapid thermal annealing en
dc.subject Nickel en
dc.subject Wide band gap semiconductors en
dc.subject Electroplating en
dc.subject Gallium compounds en
dc.subject Contact resistance en
dc.subject Gold en
dc.title Electroless nickel/gold Ohmic contacts to p-type GaN en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother James Rohan, Tyndall Microsystems, University College Cork, Cork, Ireland. +353-21-490-3000 Email: james.rohan@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-12-18T17:34:02Z
dc.description.version Accepted Version en
dc.internal.rssid 43335463
dc.internal.wokid 000253237900049
dc.contributor.funder Enterprise Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked No !!CORA!! Author's version permitted. en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress james.rohan@tyndall.ie en


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