Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays

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Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays

O'Connor, Éamon; O'Riordan, Alan; Doyle, Hugh; Moynihan, Shane; Cuddihy, Aoife; Redmond, Gareth
Date: 2005-05
Copyright: Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 86, 201114 (2005) and may be found at http://scitation.aip.org/content/aip/journal/apl/86/20/10.1063/1.1928321
Related: http://scitation.aip.org/content/aip/journal/apl/86/20/10.1063/1.1928321
Citation: O’CONNOR, É., O’RIORDAN, A., DOYLE, H., MOYNIHAN, S., CUDDIHY, A. & REDMOND, G. 2005. Near-infrared electroluminescent devices based on colloidal HgTe quantum dot arrays. Applied Physics Letters, 86, 201114. DOI: 10.1063/1.1928321
Published Version: 10.1063/1.1928321

Abstract:

Crystalline 4.6 nm HgTe quantum dots, stabilized by 1-thioglycerol ligands, were synthesized by wet chemical methods. Room-temperature photoluminescencespectra of the dots, both in solution and as solid arrays, exhibited near-infrared emission. Light-emitting devices were fabricated by deposition of quantum dot layers onto glass∕indium tin oxide (ITO)∕3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates followed by top contacting with evaporated aluminum. Room-temperature near-infraredelectroluminescence from 1mm2 ITO∕PEDOT∕HgTe∕Al devices, centered at ∼1600nm, with an external quantum efficiency of 0.02% and brightness of 150nW/mm2 at 50 mA and 2.5 V was achieved.

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