• Fabrication of MoS2 nanowire arrays and layered structures via the self-assembly of block copolymers 

  Chaudhari, Atul; Ghoshal, Tandra; Shaw, Matthew T.; O'Connell, John; Kelly, Róisín A.; Glynn, Colm; O'Dwyer, Colm; Holmes, Justin D.; Morris, Michael A. (Wiley, 2016-03-01)

  The electronics industry is beginning to show interest in 2D molybdenum disulfide (2D‐MoS2) as a potential device material due to its low band gap and high mobility. However, current methods for its synthesis are not “fab” ...
• Rectifiers, MOS diodes and LEDs made of fully porous GaN produced by chemical vapor deposition 

  Carvajal, Joan J.; Mena, Josue; Aixart, J.; O'Dwyer, Colm; Diaz, Francesc; Aguilo, Magdalena (Electrochemical Society, 2017-09)

  Here we present the fabrication of LEDs based on porous GaN produced by chemical vapor deposition (CVD) and reviewed the work done that allowed demonstrating p-n junction rectifiers and MOS diodes in a simple manner and ...
• Preferential <111>A pore propagation mechanism in n-InP anodized in KOH 

  Lynch, Robert P.; O'Dwyer, Colm; Quill, Nathan; Nakahara, Shohei; Newcomb, Simon B.; Buckley, D. Noel (Electrochemical Society, 2008-10)

  This paper describes the formation of pores during the anodization of n-InP in aqueous KOH. The pores propagate preferentially along the <111>A crystallographic directions and form truncated tetrahedral domains. A model ...
• Six-fold rotationally symmetric vanadium oxide nanostructures by a morphotropic phase transition 

  O'Dwyer, Colm; Lavayen, Vladimir; Fuenzalida, David; Newcomb, Simon B.; Santa-Ana, María A.; Benevente, Englantina; Gonzalez, Guillermo; Torres, C. M. Sotomayor (Wiley, 2007-11-12)

  In this work, we report the first observation of unique hierarchical six‐fold rotational symmetrical vanadium oxide based nanocomposite synthesized by a simple chemical route and highlight the first observation of a ...
• Nanoporous domains in n-InP anodized in KOH 

  Lynch, Robert P.; O'Dwyer, Colm; Sutton, David; Newcomb, Simon B.; Buckley, D. Noel (Electrochemical Society, 2007-05)

  A model of porous structure growth in semiconductors based on propagation of pores along the <111>A directions has been developed. The model predicts that pores originating at a surface pit lead to porous domains with a ...

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