Reductive elimination of hypersilyl halides from zinc (II) complexes. Implications for electropositive metal thin film growth

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dc.contributor.author Sirimanne, Chatu T.
dc.contributor.author Kerrigan, Marissa M.
dc.contributor.author Martin, Philip D.
dc.contributor.author Kanjolia, Ravindra K.
dc.contributor.author Elliott, Simon D.
dc.contributor.author Winter, Charles H.
dc.date.accessioned 2015-09-28T14:38:01Z
dc.date.available 2015-09-28T14:38:01Z
dc.date.issued 2015-01-05
dc.identifier.citation SIRIMANNE, C. T., KERRIGAN, M. M., MARTIN, P. D., KANJOLIA, R. K., ELLIOTT, S. D. & WINTER, C. H. 2015. Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth. Inorganic Chemistry, 54, 7-9. http://dx.doi.org/10.1021/ic502184f en
dc.identifier.volume 54 en
dc.identifier.issued 1 en
dc.identifier.startpage 7 en
dc.identifier.endpage 9 en
dc.identifier.issn 0020-1669
dc.identifier.uri http://hdl.handle.net/10468/1991
dc.identifier.doi 10.1021/ic502184f
dc.description.abstract Treatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83–99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155 °C and then single-step weight losses between 200 and 275 °C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250 °C afforded zinc metal in 97–99% yield, Si(SiMe3)3X in 91–94% yield, and THF in 81–98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition. en
dc.description.sponsorship Science Foundation Ireland (Grant 09/IN.1/I2628); National Science Foundation, United States (Grant CHE-1212574) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.relation.uri http://pubs.acs.org/doi/suppl/10.1021/ic502184f
dc.rights This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Inorganic Chemistry, copyright © American Chemical Society after peer review. en
dc.subject Chemical vapor deposition en
dc.subject Atomic layer deposition (ALD) en
dc.title Reductive elimination of hypersilyl halides from zinc (II) complexes. Implications for electropositive metal thin film growth en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Simon Elliott, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: simon.elliott@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2015-04-13T14:31:11Z
dc.description.version Submitted Version en
dc.internal.rssid 283617575
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder National Science Foundation, United States
dc.contributor.funder SAFC Hitech, United States
dc.description.status Peer reviewed en
dc.identifier.journaltitle Inorganic Chemistry en
dc.internal.copyrightchecked Yes 12 month embargo !!CORA!! Embargo not required on submitted version. en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress simon.elliott@tyndall.ie en


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