In operandi observation of dynamic annealing: a case study of boron in germanium nanowire devices

Show simple item record Koleśnik-Gray, Maria M. Sorger, Christian Biswas, Subhajit Holmes, Justin D. Weber, Heiko B. Krstić, Vojislav 2016-01-26T16:42:54Z 2016-01-26T16:42:54Z 2015-06-11
dc.identifier.citation KOLEŚNIK-GRAY, M. M., SORGER, C., BISWAS, S., HOLMES, J. D., WEBER, H. B. & KRSTIĆ, V. 2015. In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices. Applied Physics Letters, 106:233109, 1-4. en
dc.identifier.volume 106 en
dc.identifier.issued 23 en
dc.identifier.startpage 233109(1) en
dc.identifier.endpage 233109(4) en
dc.identifier.issn 0003-6951
dc.identifier.doi 10.1063/1.4922527
dc.description.abstract We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed. en
dc.description.sponsorship Science Foundation Ireland (PI Award 08/IN.1/I1873 and CSET 08/CE/I1432) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.rights © 2015, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing.The following article appeared in Journal of Applied Physics 106: 233109 (2015) and may be found at en
dc.rights.uri en
dc.subject Field-effect transistors en
dc.subject Electrical transport en
dc.subject Ion implantation en
dc.subject Silicon en
dc.subject Growth en
dc.subject Semiconductors en
dc.subject Morphology en
dc.subject Dopant en
dc.subject Annealing en
dc.subject Boron en
dc.subject Germanium en
dc.subject Diameter dependent en
dc.subject Dopant activation en
dc.subject Dynamic annealing en
dc.subject Electrical data en
dc.subject Germanium nanowires en
dc.subject Quasi-one dimensional en
dc.subject Room temperature en
dc.title In operandi observation of dynamic annealing: a case study of boron in germanium nanowire devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2015-06-12T11:57:14Z
dc.description.version Published Version en
dc.internal.rssid 305511906
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked No. !!CORA!! ": "AIP authors only may post their articles (including the AIP version) on their own or their employers’ web sites. This includes the right to include the final publisher’s version of the article in the author’s institutional repository." AIP rights and permissions: January 2016. SHERPA/RoMEO: "Publishers version/PDF may be used on author's personal website, institutional website or institutional repository". en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en
dc.identifier.articleid 233109

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