O'Connor, Éamon; Monaghan, Scott; Long, Rathnait D.; O'Mahony, Aileen; Povey, Ian M.; Cherkaoui, Karim; Pemble, Martyn E.; Brammertz, G.; Heyns, M.; Newcomb, Simon B.; Afanas'ev, V. V.; Hurley, Paul K.
(AIP Publishing, 2009)
Electrical properties of metal-oxide-semiconductor capacitors using atomic layer deposited HfO2 on n-type GaAs or InxGa1-xAs (x=0.53, 0.30, 0.15) epitaxial layers were investigated. Capacitance-voltage (CV) measurements ...