Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

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dc.contributor.author Kelly, Róisín A.
dc.contributor.author Holmes, Justin D.
dc.contributor.author Petkov, Nikolay
dc.date.accessioned 2016-02-04T15:02:29Z
dc.date.available 2016-02-04T15:02:29Z
dc.date.issued 2014-09-18
dc.identifier.citation KELLY, R. A., HOLMES, J. D. & PETKOV, N. 2014. Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing. Nanoscale, 6, 12890-12897. http://dx.doi.org/10.1039/C4NR04513K en
dc.identifier.volume 6 en
dc.identifier.issued 21 en
dc.identifier.startpage 12890 en
dc.identifier.endpage 12897 en
dc.identifier.issn 2040-3364
dc.identifier.uri http://hdl.handle.net/10468/2252
dc.identifier.doi 10.1039/c4nr04513k
dc.description.abstract In this article we detail the application of electron microscopy to visualise discrete structural transitions incurring in single crystalline Ge nanowires upon Ga-ion irradiation and subsequent thermal annealing. Sequences of images for nanowires of varying diameters subjected to an incremental increase of the Ga-ion dose were obtained. Intricate transformations dictated by a nanowire's geometry indicate unusual distribution of the cascade recoils in the nanowire volume, in comparison to planar substrates. Following irradiation, the same nanowires were annealed in the TEM and corresponding crystal recovery followed in situ. Visualising the recrystallisation process, we establish that full recovery of defect-free nanowires is difficult to obtain due to defect nucleation and growth. Our findings will have large implications in designing ion beam doping of Ge nanowires for electronic devices but also for other devices that use single crystalline nanostructured Ge materials such as thin membranes, nanoparticles and nanorods. en
dc.description.sponsorship Science Foundation Ireland (SFI grants: 09/SIRG/I1623 and 09/IN.1/I2602). en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry en
dc.relation.uri http://pubs.rsc.org/en/journals/journalissues/nr#!recentarticles&all
dc.rights © The Royal Society of Chemistry 2014. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nanoscale, copyright © Royal Society of Chemistry. To access the final edited and published work see http://pubs.rsc.org/en/content/articlepdf/2014/nr/c4nr04513k en
dc.subject Germanium nanowires en
dc.subject Ion beam irradiation en
dc.subject Structural transformation en
dc.subject Mobility Ge-channel en
dc.subject Silicon nanowires en
dc.subject Plasma nitridation en
dc.subject Implanted silicon en
dc.subject Recrystallization en
dc.subject Amorphization en
dc.subject Dielectrics en
dc.subject Transistors en
dc.subject Oxides en
dc.title Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2014-10-21T08:33:23Z
dc.description.version Accepted Version en
dc.internal.rssid 275687365
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanoscale en
dc.internal.copyrightchecked No. !!CORA!! There shall be an embargo of 12 months from the date of acceptance, after which time the author can deposit the accepted version of the submitted article in their institutional repository. There shall be a link from this article to the PDF of the version of record on the Royal Society of Chemistry's website, once this final version is available. http://www.rsc.org/journals-books-databases/journal-authors-reviewers/licences-copyright-permissions/ en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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