Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices

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dc.contributor.author Georgiev, Yordan M.
dc.contributor.author Petkov, Nikolay
dc.contributor.author McCarthy, Brendan
dc.contributor.author Yu, Ran
dc.contributor.author Djara, Vladimir
dc.contributor.author O'Connell, Dan
dc.contributor.author Lotty, Olan
dc.contributor.author Nightingale, Adrian M.
dc.contributor.author Thamsumet, Nuchutha
dc.contributor.author DeMello, John C.
dc.contributor.author Blake, Alan
dc.contributor.author Das, Samaresh
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2016-02-10T17:18:04Z
dc.date.available 2016-02-10T17:18:04Z
dc.date.issued 2014-01-07
dc.identifier.citation GEORGIEV, Y. M., PETKOV, N., MCCARTHY, B., YU, R., DJARA, V., O’CONNELL, D., LOTTY, O., NIGHTINGALE, A. M., THAMSUMET, N., DEMELLO, J. C., BLAKE, A., DAS, S. & HOLMES, J. D. 2014. Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices. Microelectronic Engineering, 118, 47-53. http://www.sciencedirect.com/science/article/pii/S016793171300734X en
dc.identifier.volume 118 en
dc.identifier.startpage 47 en
dc.identifier.endpage 53 en
dc.identifier.issn 0167-9317
dc.identifier.uri http://hdl.handle.net/10468/2274
dc.identifier.doi 10.1016/j.mee.2013.12.031
dc.description.abstract This article reports the fabrication of sub-50 nm field effect transistor (FET)-type silicon (Si) nanowire (Si NW) chemical and biological sensing devices with a junctionless architecture, as well as on the initial characterisation of their electrical and sensing performance. The devices were fabricated using a fully complementary metal-oxide-semiconductor (CMOS)-compatible top-down process on silicon-on-insulator (SOI) wafers. The fabrication process was mainly based on high-resolution electron beam lithography (EBL) and reactive ion etching (RIE) but also included photolithography (mix-and-match lithography), thin film deposition by electron beam evaporation, lift-off, thermal annealing and wet etching. The sensing performance of a matrix of nanowire devices, i.e. containing 1, 3 and 20 NWs with lengths of 0.5, 1 and 10 μm was examined. Each element of the matrix also contained five devices with different NW widths: 10, 20, 30, and 50 nm and 5 μm (a Si belt reference device). Electrical characterisation of the devices showed excellent performance as backgated junctionless nanowire transistors (JNTs): high on-currents in the range of 1-10 μA and high ratios between the on-state and off-state currents (I on/Ioff) of 6-7 orders of magnitude. In addition, the results of ionic strength sensing experiments demonstrate the very good sensing capabilities of these devices. To the best of our knowledge, these nanowire sensors are among the smallest top-down fabricated Si NW devices reported to date. en
dc.description.sponsorship European Commission (EU 7th Framework Programme under the SiNAPS project (no. 257856)); Science Foundation Ireland (SFI Grant no. 09/IN.1/I2602) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Elsevier en
dc.relation.uri http://www.sciencedirect.com/science/article/pii/S016793171300734X
dc.rights © 2014 Elsevier B.V. This submitted manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ To access the published work, see http://dx.doi.org/10.1016/j.mee.2013.12.031 en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/4.0/ en
dc.subject Silicon nanowire sensor en
dc.subject Field effect transistor en
dc.subject Junctionless nanowire transistor en
dc.subject Top-down nanofabrication en
dc.subject Electron beam lithography en
dc.subject HSQ en
dc.subject Fabrication en
dc.subject Ionic strength en
dc.subject MOS devices en
dc.subject Nanosensors en
dc.subject Nanowires en
dc.subject Photolithography en
dc.subject Chemical and biological sensing en
dc.subject Complementary metal oxide semiconductors en
dc.subject Electrical characterisation en
dc.subject High-resolution electron beam lithograph en
dc.subject Nanowire transistors en
dc.subject Silicon nanowires en
dc.subject Silicon wafers en
dc.title Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2014-06-20T12:49:57Z
dc.description.version Submitted Version en
dc.internal.rssid 260028486
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder European Commission en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Microelectronic Engineering en
dc.internal.copyrightchecked No. !!CORA!! SV can be uploaded to repository immediately. AV+24 month embargo + "link to the formal publication via its DOI, bear a CC-BY-NC-ND license" for all Elsevier articles. en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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© 2014 Elsevier B.V. This submitted manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/  To access the published work, see http://dx.doi.org/10.1016/j.mee.2013.12.031 Except where otherwise noted, this item's license is described as © 2014 Elsevier B.V. This submitted manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ To access the published work, see http://dx.doi.org/10.1016/j.mee.2013.12.031
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