Containing the catalysts: diameter controlled Ge nanowire growth

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dc.contributor.author Lotty, Olan
dc.contributor.author Biswas, Subhajit
dc.contributor.author Ghoshal, Tandra
dc.contributor.author Glynn, Colm
dc.contributor.author O'Dwyer, Colm
dc.contributor.author Petkov, Nikolay
dc.contributor.author Morris, Michael A.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2016-02-10T17:22:20Z
dc.date.available 2016-02-10T17:22:20Z
dc.date.issued 2013-07-11
dc.identifier.citation LOTTY, O., BISWAS, S., GHOSHAL, T., GLYNN, C., O' DWYER, C., PETKOV, N., MORRIS, M. A. & HOLMES, J. D. 2013. Containing the catalyst: diameter controlled Ge nanowire growth. Journal of Materials Chemistry C, 1, 4450-4456. http://dx.doi.org/10.1039/C3TC30846D en
dc.identifier.volume 1 en
dc.identifier.issued 29 en
dc.identifier.startpage 4450 en
dc.identifier.endpage 4456 en
dc.identifier.issn 2050-7526
dc.identifier.uri http://hdl.handle.net/10468/2275
dc.identifier.doi 10.1039/C3TC30846D
dc.description.abstract Sub-20 nm diameter Ge nanowires with narrow size distributions were grown from Ag nanoparticle seeds in a supercritical fluid (SCF) growth process. The mean Ge nanowire diameter and size distribution was shown to be dependent upon Ag nanoparticle coalescence, using both spin-coating and a block copolymer (BCP) templating method for particle deposition. The introduction of a metal assisted etching (MAE) processing step in order to "sink" the Ag seeds into the growth substrate, prior to nanowire growth, was shown to dramatically decrease the mean nanowire diameter from 27.7 to 14.4 nm and to narrow the diameter distributions from 22.2 to 6.8 nm. Hence, our BCP-MAE approach is a viable route for controlling the diameters of semiconductor nanowires whilst also ensuring a narrow size distribution. The MAE step in the process was found to have no detrimental effect on the length or crystalline quality of the Ge nanowires synthesised. en
dc.description.sponsorship European Commission (EU 7th Framework Programme under the SiNAPS project (Grant: 257856)); Science Foundation Ireland (Grant: 09/IN.1/I2602); Higher Education Authority (Program for Research in Third Level Institutions (2007–2011) via the INSPIRE programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry en
dc.relation.uri http://pubs.rsc.org/en/content/articlepdf/2013/tc/c3tc30846d
dc.rights © Royal Society of Chemistry 2013. en
dc.subject Crystalline quality en
dc.subject Diameter distributions en
dc.subject Growth substrates en
dc.subject Metal assisted etchings en
dc.subject Narrow size distributions en
dc.subject Particle depositions en
dc.subject Semiconductor nanowire en
dc.subject Templating method en
dc.subject Coalescence en
dc.subject Effluent treatment en
dc.subject Germanium en
dc.subject Nanoparticles en
dc.subject Nanowires en
dc.subject Size distribution en
dc.subject Supercritical fluids en
dc.subject Silver en
dc.title Containing the catalysts: diameter controlled Ge nanowire growth en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-08-20T17:04:34Z
dc.description.version Accepted Version en
dc.internal.rssid 218670471
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder European Commission en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Materials Chemistry C en
dc.internal.copyrightchecked No. !!CORA!! Deposit to Institutional Repository AV + 12 month Embargo + link from this article to the PDF of the version of record on the Royal Society of Chemistry's website http://www.rsc.org/journals-books-databases/journal-authors-reviewers/licences-copyright-permissions/ en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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