Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control

Show simple item record O'Regan, Colm Biswas, Subhajit Petkov, Nikolay Holmes, Justin D. 2016-02-10T17:26:25Z 2016-02-10T17:26:25Z 2013-10-11
dc.identifier.citation O'REGAN, C., BISWAS, S., PETKOV, N. & HOLMES, J. D. 2014. Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control. Journal of Materials Chemistry C, 2, 14-33. en
dc.identifier.volume 2 en
dc.identifier.issued 1 en
dc.identifier.startpage 14 en
dc.identifier.endpage 33 en
dc.identifier.issn 2050-7526
dc.identifier.doi 10.1039/c3tc31736f
dc.description.abstract One-dimensional semiconductor nanostructures have been studied in great depth over the past number of decades as potential building blocks in electronic, thermoelectric, optoelectronic, photovoltaic and battery devices. Silicon has been the material of choice in several industries, in particular the semiconductor industry, for the last few decades due to its stable oxide and well documented properties. Recently however, Ge has been proposed as a candidate to replace Si in microelectronic devices due to its high charge carrier mobilities. A number of various ‘bottom-up’ synthetic methodologies have been employed to grow Ge nanowires, including chemical vapour deposition, thermal evaporation, template methods, supercritical fluid synthesis, molecular beam epitaxy and solution phase synthesis. These bottom-up methods afford the opportunity to produce commercial scale quantities of nanowires with controllable lengths, diameters and crystal structure. An understanding of the vapour-liquid-solid (VLS) and vapour-solid-solid (VSS) mechanism by which most Ge nanowires are produced, is key to controlling their growth rate, aspect ratio and morphology. This article highlights the various bottom-up growth methods that have been used to synthesise Ge nanowires over the past 5-6 years, with particular emphasis on the Au/Ge eutectic system and the VLS mechanism. Thermodynamic and kinetic models used to describe Ge nanowire growth and morphology control will also be discussed in detail. en
dc.description.sponsorship Irish Research Council for Science Engineering and Technology; Science Foundation Ireland (Grants: 09/SIRG/I1621, 06/IN.1/I106, 08/CE/I1432 and 09/IN.1/I2602); Higher Education Authority (Program for Research in Third Level Institutions (2007–2011) via the INSPIRE programme) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry en
dc.rights © The Royal Society of Chemistry 2014. en
dc.subject Chemical vapour deposition en
dc.subject Germanium nanowires en
dc.subject Micro-electronic devices en
dc.subject One-dimensional semiconductor nanostructures en
dc.subject Potential building blocks en
dc.subject Semiconductor industry en
dc.subject Solution phase synthesis en
dc.subject Synthetic methodology en
dc.subject Nanowires en
dc.subject Aspect ratio en
dc.subject Effluent treatment en
dc.subject Germanium en
dc.subject Microelectronics en
dc.subject Molecular beam epitaxy en
dc.subject Morphology en
dc.subject Semiconductor device manufacture en
dc.subject Semiconductor devices en
dc.subject Supercritical fluids en
dc.title Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2013-11-29T16:07:02Z
dc.description.version Accepted Version en
dc.internal.rssid 240355101
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Irish Research Council for Science Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Materials Chemistry C en
dc.internal.copyrightchecked No. !!CORA!! Authors may deposit AV to institutional repository, with 12 month embargo from date of acceptance, and link to PDF of version of record. en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en

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