Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

Smith, Matthew D.; Taylor, Elaine; Sadler, Thomas C.; Zubialevich, Vitaly Z.; Lorenz, Katharina; Li, Haoning; O'Connell, John; Alves, Eduardo Jorge; Holmes, Justin D.; Martin, Robert W.; Parbrook, Peter J.

doi:10.1039/c4tc00480a

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dc.contributor.author	Smith, Matthew D.
dc.contributor.author	Taylor, Elaine
dc.contributor.author	Sadler, Thomas C.
dc.contributor.author	Zubialevich, Vitaly Z.
dc.contributor.author	Lorenz, Katharina
dc.contributor.author	Li, Haoning
dc.contributor.author	O'Connell, John
dc.contributor.author	Alves, Eduardo Jorge
dc.contributor.author	Holmes, Justin D.
dc.contributor.author	Martin, Robert W.
dc.contributor.author	Parbrook, Peter J.
dc.date.accessioned	2016-02-10T18:09:58Z
dc.date.available	2016-02-10T18:09:58Z
dc.date.issued	2014-04-16
dc.identifier.citation	SMITH, M. D., TAYLOR, E., SADLER, T. C., ZUBIALEVICH, V. Z., LORENZ, K., LI, H. N., O'CONNELL, J., ALVES, E., HOLMES, J. D., MARTIN, R. W. & PARBROOK, P. J. 2014. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry C, 2, 5787-5792.http://dx.doi.org/10.1039/C4TC00480A	en
dc.identifier.volume	2	en
dc.identifier.issued	29	en
dc.identifier.startpage	5787	en
dc.identifier.endpage	5792	en
dc.identifier.issn	2050-7526
dc.identifier.uri	http://hdl.handle.net/10468/2282
dc.identifier.doi	10.1039/c4tc00480a
dc.description.abstract	We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed.	en
dc.description.sponsorship	Science Foundation Ireland (SFI (10\IN.1\I2993), (07\EN\E001A), (09-IN.1-I2602); Irish Research Council (studentship and postdoctoral fellowship); Irish Government Programme for Research in Third Level Institutions Cycle 4 and 5, National Development Plan 2007–2013; European Commission (European Regional Development Funds INSPIRE, TYFFANI); European Space Agency (ESA studentship co-funding); UK Engineering and Physical Sciences Research Council (EPSRC Grant (EP/I012591/1), (EP/I029141/1)); Portuguese Foundation for Science and Technology (FCT Portugal grants PTDC/FIS-NAN/0973/2012 and “Investigador FCT”)	en
dc.format.mimetype	application/pdf	en
dc.language.iso	en	en
dc.publisher	The Royal Society of Chemistry	en
dc.relation.uri	http://pubs.rsc.org/en/content/articlepdf/2014/tc/c4tc00480a
dc.rights	© The Royal Society of Chemistry 2014.	en
dc.subject	Gallium	en
dc.subject	Secondary ion mass spectrometry	en
dc.subject	X ray diffraction	en
dc.subject	X ray photoelectron spectroscopy	en
dc.subject	Epilayers grown	en
dc.subject	Ga content	en
dc.subject	Group III	en
dc.subject	Growth conditions	en
dc.subject	InAlN/GaN HEMT	en
dc.subject	Power devices	en
dc.subject	Sub-lattices	en
dc.subject	Ultra-thin	en
dc.title	Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD	en
dc.type	Article (peer-reviewed)	en
dc.internal.authorcontactother	Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie	en
dc.internal.availability	Full text available	en
dc.date.updated	2014-10-21T11:15:58Z
dc.description.version	Submitted Version	en
dc.internal.rssid	268042224
dc.contributor.funder	Irish Research Council for Science, Engineering and Technology	en
dc.contributor.funder	Science Foundation Ireland	en
dc.contributor.funder	European Commission	en
dc.contributor.funder	European Space Agency	en
dc.contributor.funder	Fundação para a Ciência e a Tecnologia	en
dc.contributor.funder	Engineering and Physical Sciences Research Council	en
dc.description.status	Peer reviewed	en
dc.identifier.journaltitle	Journal of Materials Chemistry C	en
dc.internal.copyrightchecked	No. !!CORA!! The authors can deposit the accepted version of the submitted article in their institutional repository, after 12 months embargo from the date of acceptance. There shall be a link from this article to the PDF of the version of record on the Royal Society of Chemistry's website, once this final version is available. http://www.rsc.org/journals-books-databases/journal-authors-reviewers/licences-copyright-permissions/	en
dc.internal.licenseacceptance	Yes	en
dc.internal.IRISemailaddress	j.holmes@ucc.ie	en