dc.contributor.author |
Smith, Matthew D. |
|
dc.contributor.author |
Taylor, Elaine |
|
dc.contributor.author |
Sadler, Thomas C. |
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dc.contributor.author |
Zubialevich, Vitaly Z. |
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dc.contributor.author |
Lorenz, Katharina |
|
dc.contributor.author |
Li, Haoning |
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dc.contributor.author |
O'Connell, John |
|
dc.contributor.author |
Alves, Eduardo Jorge |
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dc.contributor.author |
Holmes, Justin D. |
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dc.contributor.author |
Martin, Robert W. |
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dc.contributor.author |
Parbrook, Peter J. |
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dc.date.accessioned |
2016-02-10T18:09:58Z |
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dc.date.available |
2016-02-10T18:09:58Z |
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dc.date.issued |
2014-04-16 |
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dc.identifier.citation |
SMITH, M. D., TAYLOR, E., SADLER, T. C., ZUBIALEVICH, V. Z., LORENZ, K., LI, H. N., O'CONNELL, J., ALVES, E., HOLMES, J. D., MARTIN, R. W. & PARBROOK, P. J. 2014. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry C, 2, 5787-5792.http://dx.doi.org/10.1039/C4TC00480A |
en |
dc.identifier.volume |
2 |
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dc.identifier.issued |
29 |
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dc.identifier.startpage |
5787 |
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dc.identifier.endpage |
5792 |
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dc.identifier.issn |
2050-7526 |
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dc.identifier.uri |
http://hdl.handle.net/10468/2282 |
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dc.identifier.doi |
10.1039/c4tc00480a |
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dc.description.abstract |
We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed. |
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dc.description.sponsorship |
Science Foundation Ireland (SFI (10\IN.1\I2993), (07\EN\E001A), (09-IN.1-I2602); Irish Research Council (studentship and postdoctoral fellowship); Irish Government
Programme for Research in Third Level Institutions Cycle 4 and
5, National Development Plan 2007–2013; European Commission (European Regional Development Funds INSPIRE, TYFFANI); European Space Agency (ESA studentship co-funding); UK Engineering and Physical Sciences Research Council (EPSRC Grant (EP/I012591/1), (EP/I029141/1)); Portuguese Foundation for Science and Technology (FCT Portugal grants PTDC/FIS-NAN/0973/2012 and “Investigador FCT”) |
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dc.format.mimetype |
application/pdf |
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dc.language.iso |
en |
en |
dc.publisher |
The Royal Society of Chemistry |
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dc.relation.uri |
http://pubs.rsc.org/en/content/articlepdf/2014/tc/c4tc00480a |
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dc.rights |
© The Royal Society of Chemistry 2014. |
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dc.subject |
Gallium |
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dc.subject |
Secondary ion mass spectrometry |
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dc.subject |
X ray diffraction |
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dc.subject |
X ray photoelectron spectroscopy |
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dc.subject |
Epilayers grown |
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dc.subject |
Ga content |
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dc.subject |
Group III |
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dc.subject |
Growth conditions |
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dc.subject |
InAlN/GaN HEMT |
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dc.subject |
Power devices |
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dc.subject |
Sub-lattices |
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dc.subject |
Ultra-thin |
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dc.title |
Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD |
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dc.type |
Article (peer-reviewed) |
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dc.internal.authorcontactother |
Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie |
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dc.internal.availability |
Full text available |
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dc.date.updated |
2014-10-21T11:15:58Z |
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dc.description.version |
Submitted Version |
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dc.internal.rssid |
268042224 |
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dc.contributor.funder |
Irish Research Council for Science, Engineering and Technology
|
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dc.contributor.funder |
Science Foundation Ireland
|
en |
dc.contributor.funder |
European Commission
|
en |
dc.contributor.funder |
European Space Agency
|
en |
dc.contributor.funder |
Fundação para a Ciência e a Tecnologia
|
en |
dc.contributor.funder |
Engineering and Physical Sciences Research Council
|
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dc.description.status |
Peer reviewed |
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dc.identifier.journaltitle |
Journal of Materials Chemistry C |
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dc.internal.copyrightchecked |
No. !!CORA!! The authors can deposit the accepted version of the submitted article in their institutional repository, after 12 months embargo from the date of acceptance. There shall be a link from this article to the PDF of the version of record on the Royal Society of Chemistry's website, once this final version is available.
http://www.rsc.org/journals-books-databases/journal-authors-reviewers/licences-copyright-permissions/ |
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dc.internal.licenseacceptance |
Yes |
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dc.internal.IRISemailaddress |
j.holmes@ucc.ie |
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