Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD

Show simple item record Smith, Matthew D. Taylor, Elaine Sadler, Thomas C. Zubialevich, Vitaly Z. Lorenz, Katharina Li, Haoning O'Connell, John Alves, Eduardo Jorge Holmes, Justin D. Martin, Robert W. Parbrook, Peter J. 2016-02-10T18:09:58Z 2016-02-10T18:09:58Z 2014-04-16
dc.identifier.citation SMITH, M. D., TAYLOR, E., SADLER, T. C., ZUBIALEVICH, V. Z., LORENZ, K., LI, H. N., O'CONNELL, J., ALVES, E., HOLMES, J. D., MARTIN, R. W. & PARBROOK, P. J. 2014. Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD. Journal of Materials Chemistry C, 2, 5787-5792. en
dc.identifier.volume 2 en
dc.identifier.issued 29 en
dc.identifier.startpage 5787 en
dc.identifier.endpage 5792 en
dc.identifier.issn 2050-7526
dc.identifier.doi 10.1039/c4tc00480a
dc.description.abstract We report on the consistent measurement of gallium incorporation in nominal InAlN layers using various complimentary techniques, underpinned by X-ray diffraction. Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from ∼24% to ∼12% when the total reactor flow rate was increased from 8000 to 24 000 standard cubic centimetres per minute. Ultra-thin InAlN/GaN HEMT layers were grown in a clean reactor to minimize Ga auto-incorporation, and measured using X-ray photoelectron spectroscopy and secondary ion mass spectrometry. The implications of Ga incorporation in InAlN layers within optoelectronic and power devices is discussed. en
dc.description.sponsorship Science Foundation Ireland (SFI (10\IN.1\I2993), (07\EN\E001A), (09-IN.1-I2602); Irish Research Council (studentship and postdoctoral fellowship); Irish Government Programme for Research in Third Level Institutions Cycle 4 and 5, National Development Plan 2007–2013; European Commission (European Regional Development Funds INSPIRE, TYFFANI); European Space Agency (ESA studentship co-funding); UK Engineering and Physical Sciences Research Council (EPSRC Grant (EP/I012591/1), (EP/I029141/1)); Portuguese Foundation for Science and Technology (FCT Portugal grants PTDC/FIS-NAN/0973/2012 and “Investigador FCT”) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher The Royal Society of Chemistry en
dc.rights © The Royal Society of Chemistry 2014. en
dc.subject Gallium en
dc.subject Secondary ion mass spectrometry en
dc.subject X ray diffraction en
dc.subject X ray photoelectron spectroscopy en
dc.subject Epilayers grown en
dc.subject Ga content en
dc.subject Group III en
dc.subject Growth conditions en
dc.subject InAlN/GaN HEMT en
dc.subject Power devices en
dc.subject Sub-lattices en
dc.subject Ultra-thin en
dc.title Determination of Ga auto-incorporation in nominal InAlN epilayers grown by MOCVD en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: en
dc.internal.availability Full text available en 2014-10-21T11:15:58Z
dc.description.version Submitted Version en
dc.internal.rssid 268042224
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder European Commission en
dc.contributor.funder European Space Agency en
dc.contributor.funder Fundação para a Ciência e a Tecnologia en
dc.contributor.funder Engineering and Physical Sciences Research Council en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Materials Chemistry C en
dc.internal.copyrightchecked No. !!CORA!! The authors can deposit the accepted version of the submitted article in their institutional repository, after 12 months embargo from the date of acceptance. There shall be a link from this article to the PDF of the version of record on the Royal Society of Chemistry's website, once this final version is available. en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress en

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