Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires

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dc.contributor.author Koleśnik-Gray, Maria M.
dc.contributor.author Lutz, Tarek
dc.contributor.author Collins, Gillian
dc.contributor.author Biswas, Subhajit
dc.contributor.author Holmes, Justin D.
dc.contributor.author Krstić, Vojislav
dc.date.accessioned 2016-02-29T09:20:06Z
dc.date.available 2016-02-29T09:20:06Z
dc.date.issued 2013-10-08
dc.identifier.citation KOLEŚNIK-GRAY, M. M., LUTZ, T., COLLINS, G., BISWAS, S., HOLMES, J. D. & KRSTIĆ, V. 2013. Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires. Applied Physics Letters, 103, 153101. http://scitation.aip.org/content/aip/journal/apl/103/15/10.1063/1.4821996 en
dc.identifier.volume 103 en
dc.identifier.startpage 153101 (1) en
dc.identifier.endpage 153101 (3) en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/2407
dc.identifier.doi 10.1063/1.4821996
dc.description.abstract Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be γ=0.65 ± 0.03γ=0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures. en
dc.description.sponsorship Science Foundation Ireland (contract-number PI-award 08/IN.1/I1873 and contract-number CSET 08/CE/I1432); Higher Education Authority (Cycle 4 of the Programme for Research in Third-Level Institutions (PRTLI4)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri http://scitation.aip.org/content/aip/journal/apl/103/15/10.1063/1.4821996
dc.rights © 2013 AIP Publishing LLC en
dc.rights.uri http://scitation.aip.org/termsconditions en
dc.subject Field effect transistors en
dc.subject Contact resistance en
dc.subject Fermi level en
dc.subject Germanium en
dc.subject Nanoelectronics en
dc.subject Schottky barriers en
dc.subject Semiconductor-metal boundaries en
dc.subject Nanowires en
dc.title Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 232955905
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
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dc.internal.IRISemailaddress j.holmes@ucc.ie en


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