Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires
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Published Version
Date
2013-10-08
Authors
Koleśnik-Gray, Maria M.
Lutz, Tarek
Collins, Gillian
Biswas, Subhajit
Holmes, Justin D.
Krstić, Vojislav
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Published Version
Abstract
Electrical properties of contact-interfaces in germanium nanowire field effect transistor devices are studied. In contrast to planar bulk devices, it is shown that the active conduction channel and gate length extend between and underneath the contact electrodes. Furthermore, direct scaling of contact resistivity and Schottky barrier height with electrode metal function is observed. The associated pinning parameter was found to be γ=0.65 ± 0.03γ=0.65 ± 0.03, which demonstrates a significant suppression of Fermi level pinning in quasi-one-dimensional structures.
Description
Keywords
Field effect transistors , Contact resistance , Fermi level , Germanium , Nanoelectronics , Schottky barriers , Semiconductor-metal boundaries , Nanowires
Citation
KOLEŚNIK-GRAY, M. M., LUTZ, T., COLLINS, G., BISWAS, S., HOLMES, J. D. & KRSTIĆ, V. 2013. Contact resistivity and suppression of Fermi level pinning in side-contacted germanium nanowires. Applied Physics Letters, 103, 153101. http://scitation.aip.org/content/aip/journal/apl/103/15/10.1063/1.4821996