Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

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dc.contributor.author McSweeney, William
dc.contributor.author Lotty, Olan
dc.contributor.author Mogili, N. V. V.
dc.contributor.author Glynn, Colm
dc.contributor.author Geaney, Hugh
dc.contributor.author Tanner, David A.
dc.contributor.author Holmes, Justin D.
dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2016-02-29T09:22:26Z
dc.date.available 2016-02-29T09:22:26Z
dc.date.issued 2013-07-18
dc.identifier.citation McSweeney, W., Lotty, O., Mogili, N. V. V., Glynn, C., Geaney, H., Tanner, D., Holmes, J. D. and O'Dwyer, C. (2013) 'Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity', Journal of Applied Physics, 114(3), 034300 (11 pp). doi: 10.1063/1.4813867 en
dc.identifier.volume 114 en
dc.identifier.issued 3 en
dc.identifier.startpage 034309 (1) en
dc.identifier.endpage 034309 (11) en
dc.identifier.issn 0021-8979
dc.identifier.uri http://hdl.handle.net/10468/2408
dc.identifier.doi 10.1063/1.4813867
dc.description.abstract By using Si(100) with different dopant type (n++-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit tunable conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted to any low-dimensional semiconducting system capable of selective etching through electroless, and possibly electrochemical, means. The process points to a method of multiscale nanostructuring NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity formation, and may be applicable to applications where high surface area, electrical connectivity, tunable surface structure, and internal porosity are required. en
dc.description.sponsorship Irish Government (INSPIRE programme, funded by the Irish Government's Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013); European Commission (European Union 7th Framework Programme under the SiNAPS project (Project Ref. No. 257856)); Irish Research Council (Award No. RS/2011/797);.Science Foundation Ireland (Award No. 07/SK/B1232a); University College Cork (UCC Strategic Research Fund) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics (AIP) en
dc.relation.uri http://scitation.aip.org/content/aip/journal/jap/114/3/10.1063/1.4813867
dc.rights © 2013 AIP Publishing LLC en
dc.rights.uri http://scitation.aip.org/termsconditions en
dc.subject Electrical connectivity en
dc.subject Electrical transport en
dc.subject Mesoporous structures en
dc.subject Reduction potential en
dc.subject Resistance increase en
dc.subject Semiconducting systems en
dc.subject Surface-roughening en
dc.subject Tunable conductivity en
dc.subject Carrier concentration en
dc.subject High resolution electron microscopy en
dc.subject Mesoporous materials en
dc.subject Nanowires en
dc.subject Porosity en
dc.subject Silicon en
dc.title Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.internal.rssid 221344580
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Higher Education Authority en
dc.contributor.funder European Commission en
dc.contributor.funder University College Cork en
dc.contributor.funder Seventh Framework Programme
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked !!CORA!! en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257856/EU/Semiconducting Nanowire Platform for Autonomous Sensors/SINAPS
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Short Term Travel Fellowship (STTF)/07/SK/B1232a - STTF 11/IE/Optical Probing of Phase Changes in Inverse opal Photonic Crystal Li-on Battery Electrodes/


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