Molecular layer doping: non-destructive doping of silicon and germanium

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dc.contributor.author Long, Brenda
dc.contributor.author Verni, Giuseppe A.
dc.contributor.author O'Connell, John
dc.contributor.author Holmes, Justin D.
dc.contributor.author Shayesteh, Maryam
dc.contributor.author O'Connell, Dan
dc.contributor.author Duffy, Ray
dc.date.accessioned 2016-02-29T12:34:46Z
dc.date.available 2016-02-29T12:34:46Z
dc.date.issued 2014-06
dc.identifier.citation LONG, B., VERNI, G. A., O'CONNELL, J., HOLMES, J. D., SHAYESTEH, M., O'CONNELL, D. & DUFFY, R. (2014) Molecular Layer Doping: Non-destructive doping of silicon and germanium. 2014 20th International Conference on Ion Implantation Technology (IIT). Portland, Oregon, 26 June - 4 July. IEEE, pp. 1-4 http://dx.doi.org/10.1109/IIT.2014.6939995 en
dc.identifier.startpage 1 en
dc.identifier.endpage 4 en
dc.identifier.uri http://hdl.handle.net/10468/2412
dc.identifier.doi 10.1109/IIT.2014.6939995
dc.description.abstract This work describes a non-destructive method to introduce impurity atoms into silicon (Si) and germanium (Ge) using Molecular Layer Doping (MLD). Molecules containing dopant atoms (arsenic) were designed, synthesized and chemically bound in self-limiting monolayers to the semiconductor surface. Subsequent annealing enabled diffusion of the dopant atom into the substrate. Material characterization included assessment of surface analysis (AFM) and impurity and carrier concentrations (ECV). Record carrier concentration levels of arsenic (As) in Si (~5Ã 10^20 atoms/cm3) by diffusion doping have been achieved, and to the best of our knowledge this work is the first demonstration of doping Ge by MLD. Furthermore due to the ever increasing surface to bulk ratio of future devices (FinFets, MugFETs, nanowire-FETS) surface packing spacing requirements of MLD dopant molecules is becoming more relaxed. It is estimated that a molecular spacing of 2 nm and 3 nm is required to achieve doping concentration of 10^20 atoms/cm3 in a 5 nm wide fin and 5 nm diameter nanowire respectively. From a molecular perspective this is readily achievable. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IEEE en
dc.relation.ispartof Ion Implantation Technology (IIT), 2014 20th International Conference
dc.relation.uri http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6927586
dc.rights © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. en
dc.subject Chemistry en
dc.subject Doping en
dc.subject Molecular layer doping en
dc.subject Silicon en
dc.subject Surface functionalisation en
dc.title Molecular layer doping: non-destructive doping of silicon and germanium en
dc.type Conference item en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2015-11-09T15:11:52Z
dc.description.version Accepted Version en
dc.internal.rssid 324341711
dc.description.status Peer reviewed en
dc.internal.copyrightchecked No!!CORA!! AV permitted with set statement. http://www.ieee.org/publications_standards/publications/rights/paperversionpolicy.html en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Portland, OR, USA en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.internal.IRISemailaddress brenda.long@ucc.ie en


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