Engineering the growth of germanium nanowires by tuning the supersaturation of Au/Ge binary alloy catalysts

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dc.contributor.author O'Regan, Colm
dc.contributor.author Biswas, Subhajit
dc.contributor.author O'Kelly, Curtis
dc.contributor.author Jung, Soon Jung
dc.contributor.author Boland, John J.
dc.contributor.author Petkov, Nikolay
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2016-04-20T13:38:45Z
dc.date.available 2016-04-20T13:38:45Z
dc.date.issued 2013-07-08
dc.identifier.citation O’REGAN, C., BISWAS, S., O’KELLY, C., JUNG, S. J., BOLAND, J. J., PETKOV, N. & HOLMES, J. D. 2013. Engineering the Growth of Germanium Nanowires by Tuning the Supersaturation of Au/Ge Binary Alloy Catalysts. Chemistry of Materials, 25, 3096-3104. http://dx.doi.org/10.1021/cm401281y en
dc.identifier.volume 25 en
dc.identifier.issued 15 en
dc.identifier.startpage 3096 en
dc.identifier.endpage 3104 en
dc.identifier.issn 0897-4756
dc.identifier.uri http://hdl.handle.net/10468/2466
dc.identifier.doi 10.1021/cm401281y
dc.description.abstract The synthesis of Ge nanowires with very high-aspect ratios (greater than 1000) and uniform crystal growth directions is highly desirable, not only for investigating the fundamental properties of nanoscale materials but also for fabricating integrated functional nanodevices. In this article, we present a unique approach for manipulating the supersaturation, and thus the growth kinetics, of Ge nanowires using Au/Ge bilayer films. Ge nanowires were synthesized on substrates consisting of two parts: a Au film on one-half of a Si substrate and a Au/Ge bilayer film on the other half of the substrate. Upon annealing the substrate, Au and Au/Ge binary alloy catalysts were formed on both the Au and Au/Ge-sides of the substrates, respectively, under identical conditions. The mean lengths of Ge nanowires produced were found to be significantly longer on the Au/Ge bilayer side of the substrate compared to the Au-coated side, as a result of a reduced incubation time for nucleation on the bilayer side. The mean length and growth rate on the bilayer side (with a 1 nm Ge film) was found to be 5.5 ± 2.3 μm and 3.7 × 10–3 μm s–1, respectively, and 2.7 ± 0.8 μm and 1.8 × 10–3 μm s–1 for the Au film. Additionally, the lengths and growth rates of the nanowires further increased as the thickness of the Ge layer in the Au/Ge bilayer was increased. In-situ TEM experiments were performed to probe the kinetics of Ge nanowire growth from the Au/Ge bilayer substrates. Diffraction contrast during in situ heating of the bilayer films clarified the fact that thinner Ge films, that is, lower Ge concentration, take longer to alloy with Au than thicker films. Phase separation was also more significant for thicker Ge films upon cooling. The use of binary alloy catalyst particles, instead of the more commonly used elementary metal catalyst, enabled the supersaturation of Ge during nanowire growth to be readily tailored, offering a unique approach to producing very long high aspect ratio nanowires. en
dc.description.sponsorship Irish Research Council and Science Foundation Ireland (Grants: 09/SIRG/I1621, 06/IN.1/I106, 08/CE/I1432 and 09/IN.1/I2602); Higher Education Authority (HEA Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society en
dc.relation.uri http://pubs.acs.org/journal/cmatex
dc.rights © 2013 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/cm401281y en
dc.subject Nanowires en
dc.subject Germanium en
dc.subject Supersaturation en
dc.subject Growth rate en
dc.subject Vapor-liquid-solid growth en
dc.subject Semiconductor nanowires en
dc.subject Nanoelectromechanical devices en
dc.subject Silicon nanowires en
dc.subject Phase diagram en
dc.subject Ge nanowires en
dc.subject Temperature en
dc.subject Nucleation en
dc.subject Au en
dc.subject Anodes en
dc.title Engineering the growth of germanium nanowires by tuning the supersaturation of Au/Ge binary alloy catalysts en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-08-20T17:42:34Z
dc.description.version Accepted Version en
dc.internal.rssid 225931829
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Irish Research Council for Science Engineering and Technology en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chemistry of Materials en
dc.internal.copyrightchecked No. !!CORA!! AV+12 month embargo+set statement en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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