Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires

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dc.contributor.author Biswas, Subhajit
dc.contributor.author Doherty, Jessica
dc.contributor.author Saladukha, Dzianis
dc.contributor.author Ramasse, Quentin
dc.contributor.author Majumdar, Dipanwita
dc.contributor.author Upmanyu, Moneesh
dc.contributor.author Singha, Achintya
dc.contributor.author Ochalski, Tomasz J.
dc.contributor.author Morris, Michael A.
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2016-04-30T10:50:46Z
dc.date.available 2016-04-30T10:50:46Z
dc.date.issued 2016-04-20
dc.identifier.citation Biswas, S., Doherty, J., Saladukha, D., Ramasse, Q., Majumdar, D., Upmanyu, M., Singha, A., Ochalski, T., Morris, M. A. and Holmes, J. D. (2016) 'Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires', 7, 11405. doi: 10.1038/ncomms11405 en
dc.identifier.volume 11405-7 en
dc.identifier.startpage 11405-1 en
dc.identifier.endpage 12 en
dc.identifier.issn 2041-1723
dc.identifier.uri http://hdl.handle.net/10468/2505
dc.identifier.doi 10.1038/ncomms11405
dc.description.abstract The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge1-xSnx alloy nanowires, with a Sn incorporation up to 9.2[thinsp]at.%, far in excess of the equilibrium solubility of Sn in bulk Ge, through a conventional catalytic bottom-up growth paradigm using noble metal and metal alloy catalysts. Metal alloy catalysts permitted a greater inclusion of Sn in Ge nanowires compared with conventional Au catalysts, when used during vapour-liquid-solid growth. The addition of an annealing step close to the Ge-Sn eutectic temperature (230[thinsp][deg]C) during cool-down, further facilitated the excessive dissolution of Sn in the nanowires. Sn was distributed throughout the Ge nanowire lattice with no metallic Sn segregation or precipitation at the surface or within the bulk of the nanowires. The non-equilibrium incorporation of Sn into the Ge nanowires can be understood in terms of a kinetic trapping model for impurity incorporation at the triple-phase boundary during growth. en
dc.description.sponsorship Science Foundation Ireland (14/IA/2513, 12/RC/2278, SFI International Strategic Co-operation Award (ISCA) India-Ireland programme, SFI/14/US/I3057) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Nature Publishing Group en
dc.relation.uri http://www.nature.com/ncomms/2016/160420/ncomms11405/full/ncomms11405.html
dc.rights This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ en
dc.rights.uri http://creativecommons.org/licenses/by/4.0/ en
dc.subject Physical sciences en
dc.subject Materials science en
dc.subject Nanotechnology en
dc.subject Physical chemistry en
dc.title Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1-xSnx nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2016-04-26T14:14:17Z
dc.description.version Accepted Version en
dc.internal.rssid 345843431
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nature Communications en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.identifier.articleid 11405


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This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ Except where otherwise noted, this item's license is described as This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
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