Space charge limited current mechanism in Bi2S3 nanowires

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JAP_16-119-114308(1).pdf(1.05 MB)
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Date
2016-03-18
Authors
Kunakova, Gunta
Viter, R.
Abay, S.
Biswas, Subhajit
Holmes, Justin D.
Bauch, T.
Lombardi, F.
Erts, Donats
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AIP Publishing
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Abstract
We report on the charge transport properties of individual Bi2S3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current–voltage characteristics at several temperatures.
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Keywords
Bi2S3 nanowires , Memristor , Arrays , Crystals , Electrical conductivity , Semiconductor materials , Nanowires , Porosity , Space charge , Bismuth compounds
Citation
Kunakova, G.; Viter, R.; Abay, S.; Biswas, S.; Holmes, J. D.; Bauch, T. Lombardi, F.; Erts, D. (2016) 'Space charge limited current mechanism in Bi2S3 nanowires'. Journal of Applied Physics, 119 :114308-1-114308-5. http://scitation.aip.org/content/aip/journal/jap/119/11/10.1063/1.4944432
Copyright
© 2016 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Kunakova, G., Viter, R., Abay, S., Biswas, S., Holmes, J. D., Bauch, T., Lombardi, F. & Erts, D. 2016. Space charge limited current mechanism in Bi2S3 nanowires. Journal of Applied Physics, 119: 114308.and may be found at http://scitation.aip.org/content/aip/journal/jap/119/11/10.1063/1.4944432