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| dc.contributor.author | Pavarelli, Nicola | |
| dc.contributor.author | Ochalski, Tomasz J. | |
| dc.contributor.author | Murphy-Armando, Felipe | |
| dc.contributor.author | Huo, Y. | |
| dc.contributor.author | Schmidt, Michael | |
| dc.contributor.author | Huyet, Guillaume | |
| dc.contributor.author | Harris, J. S. | |
| dc.date.accessioned | 2016-05-23T14:43:17Z | |
| dc.date.available | 2016-05-23T14:43:17Z | |
| dc.date.issued | 2013-04-25 | |
| dc.identifier.citation | Pavarelli, N., Ochalski, T. J., Murphy-Armando, F., Huo, Y., Schmidt, M., Huyet, G. & Harris, J. S. (2013) ‘Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers’, Physical Review Letters, 110, 177404. http://dx.doi.org/10.1103/PhysRevLett.110.177404 | en |
| dc.identifier.volume | 110 | en |
| dc.identifier.startpage | 177404 (1) | en |
| dc.identifier.endpage | 177404 (5) | en |
| dc.identifier.issn | 0031-9007 | |
| dc.identifier.other | 1079-7114 | |
| dc.identifier.uri | http://hdl.handle.net/10468/2602 | |
| dc.identifier.doi | 10.1103/PhysRevLett.110.177404 | |
| dc.description.abstract | We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge. | en |
| dc.description.sponsorship | Science Foundation Ireland (SFI grants No. 07/IN.1/I929, No. 07/IN.1/I1810, and No. 09/SIRG/I1621); Enterprise Ireland (Grant No. RE/2007/006); Higher Education Authority (INSPIRE programme under the HEA PRTLI Cycle 4, National Development Plan 2007-2013.) | en |
| dc.format.mimetype | application/pdf | en |
| dc.language.iso | en | en |
| dc.publisher | American Physical Society | en |
| dc.relation.uri | http://link.aps.org/doi/10.1103/PhysRevLett.110.177404 | |
| dc.rights | © 2013 American Physical Society | en |
| dc.subject | Germanium | en |
| dc.subject | Band offsets | en |
| dc.subject | Carrier confinements | en |
| dc.subject | Emission dynamics | en |
| dc.subject | InGaAs alloys | en |
| dc.subject | Optical emissions | en |
| dc.subject | Ge quantum well | en |
| dc.title | Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers | en |
| dc.type | Article (peer-reviewed) | en |
| dc.internal.authorcontactother | Felipe Murphy-Armando, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: philip.murphy@tyndall.ie | en |
| dc.internal.availability | Full text available | en |
| dc.date.updated | 2015-08-20T10:04:52Z | |
| dc.description.version | Published Version | en |
| dc.internal.rssid | 314277624 | |
| dc.contributor.funder | Enterprise Ireland | en |
| dc.contributor.funder | Higher Education Authority | en |
| dc.contributor.funder | Science Foundation Ireland | en |
| dc.description.status | Peer reviewed | en |
| dc.identifier.journaltitle | Physical Review Letters | en |
| dc.internal.copyrightchecked | No. !!CORA!! Yes | en |
| dc.internal.licenseacceptance | Yes | en |
| dc.internal.IRISemailaddress | philip.murphy@tyndall.ie | en |
| dc.identifier.articleid | 177404 |
