Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers

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dc.contributor.author Pavarelli, Nicola
dc.contributor.author Ochalski, Tomasz J.
dc.contributor.author Murphy-Armando, Felipe
dc.contributor.author Huo, Y.
dc.contributor.author Schmidt, Michael
dc.contributor.author Huyet, Guillaume
dc.contributor.author Harris, J. S.
dc.date.accessioned 2016-05-23T14:43:17Z
dc.date.available 2016-05-23T14:43:17Z
dc.date.issued 2013-04-25
dc.identifier.citation Pavarelli, N., Ochalski, T. J., Murphy-Armando, F., Huo, Y., Schmidt, M., Huyet, G. & Harris, J. S. (2013) ‘Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers’, Physical Review Letters, 110, 177404. http://dx.doi.org/10.1103/PhysRevLett.110.177404 en
dc.identifier.volume 110 en
dc.identifier.startpage 177404 (1) en
dc.identifier.endpage 177404 (5) en
dc.identifier.issn 0031-9007
dc.identifier.other 1079-7114
dc.identifier.uri http://hdl.handle.net/10468/2602
dc.identifier.doi 10.1103/PhysRevLett.110.177404
dc.description.abstract We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the electronegativity of the layer in contact with Ge, leading to different types of optical transitions in the heterostructure. When group-V atoms compose the interfaces, only electrons are confined in Ge, whereas both carriers are confined when the interface consists of group-III atoms. The different carrier confinement results in different emission dynamics behavior. This study provides a solution to obtain efficient light emission from Ge. en
dc.description.sponsorship Science Foundation Ireland (SFI grants No. 07/IN.1/I929, No. 07/IN.1/I1810, and No. 09/SIRG/I1621); Enterprise Ireland (Grant No. RE/2007/006); Higher Education Authority (INSPIRE programme under the HEA PRTLI Cycle 4, National Development Plan 2007-2013.) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society en
dc.relation.uri http://link.aps.org/doi/10.1103/PhysRevLett.110.177404
dc.rights © 2013 American Physical Society en
dc.subject Germanium en
dc.subject Band offsets en
dc.subject Carrier confinements en
dc.subject Emission dynamics en
dc.subject InGaAs alloys en
dc.subject Optical emissions en
dc.subject Ge quantum well en
dc.title Optical emission of strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Felipe Murphy-Armando, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: philip.murphy@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2015-08-20T10:04:52Z
dc.description.version Published Version en
dc.internal.rssid 314277624
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder Higher Education Authority en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Review Letters en
dc.internal.copyrightchecked No. !!CORA!! Yes en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress philip.murphy@tyndall.ie en
dc.identifier.articleid 177404

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