Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process

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dc.contributor.author Chaudhari, Atul
dc.contributor.author Ghoshal, Tandra
dc.contributor.author Shaw, Matthew T.
dc.contributor.author Cummins, Cian
dc.contributor.author Borah, Dipu
dc.contributor.author Holmes, Justin D.
dc.contributor.author Morris, Michael A.
dc.contributor.editor Wallow, Thomas I.
dc.contributor.editor Hohle, Christoph K.
dc.date.accessioned 2016-05-24T08:54:27Z
dc.date.available 2016-05-24T08:54:27Z
dc.date.issued 2014-03-27
dc.identifier.citation Chaudhari, A., Ghoshal, T., Shaw M. T., Cummins C., Borah, D. Holmes, J. D., Morris, M. A. "Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process ", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905110 (March 27, 2014); doi:10.1117/12.2046044; http://dx.doi.org/10.1117/12.2046044 en
dc.identifier.volume 9051 en
dc.identifier.startpage 905110-1 en
dc.identifier.endpage 905110-10 en
dc.identifier.isbn 9780819499745
dc.identifier.uri http://hdl.handle.net/10468/2604
dc.identifier.doi 10.1117/12.2046044
dc.description.abstract The nanometer range structure produced by thin films of diblock copolymers makes them a great of interest as templates for the microelectronics industry. We investigated the effect of annealing solvents and/or mixture of the solvents in case of symmetric Poly (styrene-block-4vinylpyridine) (PS-b-P4VP) diblock copolymer to get the desired line patterns. In this paper, we used different molecular weights PS-b-P4VP to demonstrate the scalability of such high χ BCP system which requires precise fine-tuning of interfacial energies achieved by surface treatment and that improves the wetting property, ordering, and minimizes defect densities. Bare Silicon Substrates were also modified with polystyrene brush and ethylene glycol self-assembled monolayer in a simple quick reproducible way. Also, a novel and simple in situ hard mask technique was used to generate sub-7nm Iron oxide nanowires with a high aspect ratio on Silicon substrate, which can be used to develop silicon nanowires post pattern transfer. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher SPIE en
dc.relation.ispartof SPIE Proceedings
dc.relation.uri http://proceedings.spiedigitallibrary.org/conferenceproceedings.aspx
dc.rights © 2014 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. en
dc.subject Block copolymers en
dc.subject Solvent annealing en
dc.subject High χ polymers en
dc.subject Polymer brushes en
dc.subject Metal oxide inclusion en
dc.subject Annealing en
dc.subject Iron en
dc.subject Microelectronics en
dc.subject Nanofibers en
dc.subject Nanotechnology en
dc.subject Oxides en
dc.subject Self-assembled monolayers en
dc.subject Silicon en
dc.subject Thin films en
dc.title Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process en
dc.type Conference item en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2015-05-26T11:53:01Z
dc.description.version Published Version en
dc.internal.rssid 303353369
dc.description.status Peer reviewed en
dc.identifier.journaltitle Proceedings of SPIE en
dc.internal.copyrightchecked No. !!CORA!! Yes en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation San Jose, CA, USA en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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