First-principles calculation of P-type alloy scattering in Si1-xGex

Show simple item record

dc.contributor.author Joyce, S.
dc.contributor.author Murphy-Armando, Felipe
dc.contributor.author Fahy, Stephen B.
dc.date.accessioned 2016-06-02T09:03:09Z
dc.date.available 2016-06-02T09:03:09Z
dc.date.issued 2007-04
dc.identifier.citation JOYCE, S., MURPHY-ARMANDO, F. & FAHY, S. 2007. 'First-principles calculation of P-type alloy scattering in Si1-xGex'. Physical Review B, 75, 155201. doi:10.1103/PhysRevB.75.155201 en
dc.identifier.volume 75 en
dc.identifier.startpage 155201-1 en
dc.identifier.endpage 155201-5 en
dc.identifier.issn 2469-9950
dc.identifier.issn 2469-9969
dc.identifier.uri http://hdl.handle.net/10468/2669
dc.identifier.doi 10.1103/PhysRevB.75.155201
dc.description.abstract The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys.. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Physical Society en
dc.relation.uri http://link.aps.org/doi/10.1103/PhysRevB.75.155201
dc.rights ©2007 The American Physical Society en
dc.subject Elemental semiconductors en
dc.subject Theory of electronic transport en
dc.subject Theory of electronic transport scattering mechanisms en
dc.subject Disordered solids en
dc.title First-principles calculation of P-type alloy scattering in Si1-xGex en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Felipe Murphy-Armando, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: philip.murphy@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-02-20T12:46:20Z
dc.description.version Published Version en
dc.internal.rssid 726925
dc.internal.wokid 156030766
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Physical Review B en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress philip.murphy@tyndall.ie
dc.identifier.articleid 155201


Files in this item

This item appears in the following Collection(s)

Show simple item record

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement