First principles calculation of electron-phonon and alloy scattering in strained SiGe

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dc.contributor.author Murphy-Armando, Felipe
dc.contributor.author Fahy, Stephen B.
dc.date.accessioned 2016-06-02T13:51:33Z
dc.date.available 2016-06-02T13:51:33Z
dc.date.issued 2011-12-11
dc.identifier.citation MURPHY-ARMANDO, F. & FAHY, S. B. 2011. First principles calculation of electron-phonon and alloy scattering in strained SiGe. Journal of Applied Physics, 110, 123706. doi:10.1063/1.3669446 en
dc.identifier.volume 110 en
dc.identifier.issued 12 en
dc.identifier.startpage 123706-1 en
dc.identifier.endpage 123706-7 en
dc.identifier.issn 0021-8979
dc.identifier.issn 1089-7550
dc.identifier.uri http://hdl.handle.net/10468/2677
dc.identifier.doi 10.1063/1.3669446
dc.description.abstract First-principles electronic structure methods are used to predict the mobility of n-type carrier scattering in strained SiGe. We consider the effects of strain on the electron-phonon deformation potentials and the alloy scattering parameters. We calculate the electron-phonon matrix elements and fit them up to second order in strain. We find, as expected, that the main effect of strain on mobility comes from the breaking of the degeneracy of the six Δ and L valleys, and the choice of transport direction. The non-linear effects on the electron-phonon coupling of the Δ valley due to shear strain are found to reduce the mobility of Si-like SiGe by 50% per % strain. We find increases in mobility between 2 and 11 times that of unstrained SiGe for certain fixed Ge compositions, which should enhance the thermoelectric figure of merit in the same order, and could be important for piezoresistive applications. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Institute of Physics Publishing en
dc.relation.uri http://scitation.aip.org/content/aip/journal/jap/110/12/10.1063/1.3669446
dc.rights © 2011, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics, Vol 110: 12, 123706. (2011) and may be found at http://scitation.aip.org/content/aip/journal/jap/110/12/10.1063/1.3669446 en
dc.subject Electron mobility en
dc.subject Shear deformation en
dc.subject Electron-phonon interactions en
dc.subject Point defect scattering en
dc.subject Conduction bands en
dc.subject Ab initio calculations en
dc.subject Semiconductor materials en
dc.subject Ge-Si alloys en
dc.subject Seebeck effect en
dc.title First principles calculation of electron-phonon and alloy scattering in strained SiGe en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Felipe Murphy-Armando, Tyndall Theory Modelling & Design Centre, University College Cork, Cork, Ireland. +353-21-490-3000 Email: philip.murphy@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2013-02-20T12:18:29Z
dc.description.version Published Version en
dc.internal.rssid 198533804
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Journal of Applied Physics en
dc.internal.copyrightchecked No en
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress philip.murphy@tyndall.ie
dc.identifier.articleid 123706


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